Basic properties of a new Nd-doped laser crystal： Nd：GdNbO4  

作　　者：Shoujun DING Qingli ZHANG Wenpeng LIU Jianqiao LUO Dunlu SUN 

机构地区：[1]Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China [2]University of Science and Technology of China, Hefei 230026, China

出　　处：《Frontiers of Optoelectronics》2017年第2期111-116,共6页光电子前沿（英文版）

基　　金：This work was supported by the National Natural Science Foundation of China （Grant Nos. 61205173, 51272254, 51502292, and 61405206） and the Knowledge Innovation Program of the Chinese Academy of Sciences （No. CXJJ- 15M055）.

摘　　要：A Nd-doped GdNbO4 single crystals have been grown successfully using the Czochralski technique. The chemical etching method was employed to study the defects in the structural morphology of Nd：GdNbO4 crystal with phosphoric acid etchant. Mechanical proper- ties （such as hardness, yield strength, fracture toughness, and brittle index） of the as-grown crystal were system- atically estimated on the basis of the Vickers hardness test for the first time. The transmission spectrum of Nd： GdNbO4 was measured in the wavelength range of 320- 2400 nm at room temperature, and the absorption peaks were assigned. Results hold great significance for further research on Nd：GdNbO4.A Nd-doped GdNbO4 single crystals have been grown successfully using the Czochralski technique. The chemical etching method was employed to study the defects in the structural morphology of Nd：GdNbO4 crystal with phosphoric acid etchant. Mechanical proper- ties （such as hardness, yield strength, fracture toughness, and brittle index） of the as-grown crystal were system- atically estimated on the basis of the Vickers hardness test for the first time. The transmission spectrum of Nd： GdNbO4 was measured in the wavelength range of 320- 2400 nm at room temperature, and the absorption peaks were assigned. Results hold great significance for further research on Nd：GdNbO4.

关 键 词：Nd：GdNbO4 laser crystal mechanical proper-ties chemical etching 

分 类 号：TN[电子电信]