45-GHz and 60-GHz 90 nm CMOS power amplifiers with a fully symmetrical 8-way transformer power combiner  

作　　者：Zhengdong JIANG Kaizhe GUO Peng HUANG Yiming FAN Chenxi ZHAO Yongling BAN Jun LIU Kai KANG 

机构地区：[1]School of Electronic Engineering, University of Electronic Science and Technology of China [2]Department of Electrical and Computer Engineering, Ohio State University [3]College of Electronics and Information, Hangzhou Dianzi University

出　　处：《Science China(Information Sciences)》2017年第8期32-43,共12页中国科学（信息科学）（英文版）

基　　金：supported by National Natural Science Foundation of China (Grant Nos. 61331006, 61422104);National Science and Technology Major Project of the Ministry of Science and Technology of China (Grand No. 2016ZX03001015-004);National High Technology Research and Development Program of China (863) (Grand No. 2015AA01A704)

摘　　要：In this paper, 45 GHz and 60 GHz power amplifiers（PAs） with high output power have been successfully designed by using 90 nm CMOS process. The 45 GHz（60 GHz） PA consists of two（four） differential stages. The sizes of transistors have been designed in an appropriate way so as to trade-off gain, efficiency and stability. Due to limited supply voltage and low breakdown voltage of CMOS MOSFET compared with the traditional III-V technologies, the technique of power combining has been applied to achieve a high output power. In particular, a novel 8-way distributed active transformer power combiner has been proposed for realizing such mm-wave PA. The proposed transformer combiner with a fully symmetrical layout can improve its input impedance balance at mm-wave frequency regime significantly. Taking its advantages of this novel transformer based power combiner, our realized 45 GHz（60 GHz） mm-wave PA has achieved the gain of20.3 d B（16.8 d B）, the maximum PAE of 14.5%（13.4%） and the saturated output power of 21 d Bm（21 d Bm）with the 1.2 V supply voltage.In this paper, 45 GHz and 60 GHz power amplifiers（PAs） with high output power have been successfully designed by using 90 nm CMOS process. The 45 GHz（60 GHz） PA consists of two（four） differential stages. The sizes of transistors have been designed in an appropriate way so as to trade-off gain, efficiency and stability. Due to limited supply voltage and low breakdown voltage of CMOS MOSFET compared with the traditional III-V technologies, the technique of power combining has been applied to achieve a high output power. In particular, a novel 8-way distributed active transformer power combiner has been proposed for realizing such mm-wave PA. The proposed transformer combiner with a fully symmetrical layout can improve its input impedance balance at mm-wave frequency regime significantly. Taking its advantages of this novel transformer based power combiner, our realized 45 GHz（60 GHz） mm-wave PA has achieved the gain of20.3 d B（16.8 d B）, the maximum PAE of 14.5%（13.4%） and the saturated output power of 21 d Bm（21 d Bm）with the 1.2 V supply voltage.

关 键 词：millimeter wave power amplifier CMOS transformer power combiner 45 GHz 60 GHz 

分 类 号：TN722.75[电子电信—电路与系统] TN73