Terahertz detector for imaging in 180-nm standard CMOS process  

作　　者：Zhaoyang LIU Liyuan LIU Zhao ZHANG Jian LIU Nanjian WU 

机构地区：[1]State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences [2]University of Chinese Academy of Sciences

出　　处：《Science China(Information Sciences)》2017年第8期198-206,共9页中国科学（信息科学）（英文版）

基　　金：supported by National Key Research and Development Program of China (Grant No. 2016YFA0202202);National Natural Science Foundation of China (Grant Nos. 61474108, 61331003);Beijing Natural Science Foundation (Grant No. 4152051);Chinese Academy of Sciences

摘　　要：A CMOS terahertz（THz） detector implemented in a 180-nm standard CMOS process is proposed,and room-temperature detection of 0.94-THz radiation is demonstrated. The detector consists of an integrated on-chip patch antenna and a source-feeding NMOS transistor as the rectifying element. To improve the power transfer efficiency between the patch antenna and NMOS transistor, a novel short-stub matching network is proposed. An open quarter-wavelength microstrip transmission line connecting gate is proposed to eliminate the influence of the bonding wire and pad on the antenna-transistor impedance matching. Illuminated by a 0.94-THz BWO source, the measured voltage responsivity（Rv） and noise equivalent power（NEP） of the detector are 31 V/W and 1.1 n W/Hz1/2, respectively.A CMOS terahertz（THz） detector implemented in a 180-nm standard CMOS process is proposed,and room-temperature detection of 0.94-THz radiation is demonstrated. The detector consists of an integrated on-chip patch antenna and a source-feeding NMOS transistor as the rectifying element. To improve the power transfer efficiency between the patch antenna and NMOS transistor, a novel short-stub matching network is proposed. An open quarter-wavelength microstrip transmission line connecting gate is proposed to eliminate the influence of the bonding wire and pad on the antenna-transistor impedance matching. Illuminated by a 0.94-THz BWO source, the measured voltage responsivity（Rv） and noise equivalent power（NEP） of the detector are 31 V/W and 1.1 n W/Hz1/2, respectively.

关 键 词：terahertz detector terahertz in：aging CMOS patch antenna matching network 

分 类 号：TN386.1[电子电信—物理电子学]