A low power V-band LC VCO with high Q varactor technique in 40 nm CMOS process  被引量:1

A low power V-band LC VCO with high Q varactor technique in 40 nm CMOS process

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作  者:Qian ZHOU Yan HAN Shifeng ZHANG Xiaoxia HAN Lu JIE Ray C.C.CHEUNG Guangtao FENG 

机构地区:[1]College of Information Science and Electronic Engineering, Zhejiang University [2]Department of Electronic Engineering, City University of Hong Kong [3]Semiconductor Manufacturing International Corporation

出  处:《Science China(Information Sciences)》2017年第8期248-250,共3页中国科学(信息科学)(英文版)

摘  要:Dear editor,Demand for higher data transmission rate,particularly in the modern communication systems,has been increasing over the years.For example,the IEEE standard 802.15.3c specifies more than2 Gbps data transmission rate,which pushes the frequency band up to 60 GHz.In the transceiver,the working frequency of VCO is in 60 GHz,and that has attracted many people to study it[1,2].Dear editor,Demand for higher data transmission rate,particularly in the modern communication systems,has been increasing over the years.For example,the IEEE standard 802.15.3c specifies more than2 Gbps data transmission rate,which pushes the frequency band up to 60 GHz.In the transceiver,the working frequency of VCO is in 60 GHz,and that has attracted many people to study it[1,2].

关 键 词:VCO A low power V-band LC VCO with high Q varactor technique in 40 nm CMOS process CMOS in high NM LC with 

分 类 号:TN752[电子电信—电路与系统]

 

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