新型铟砷锑非致冷型光导探测器的性能研究  

Performance Study of New Uncooled Indium Arsenic Antimony Photoconductive Detector

作　　者：曹红红 

机构地区：[1]陕西华星电子集团有限公司红外分公司,陕西咸阳712099

出　　处：《红外》2017年第7期48-52,共5页Infrared

摘　　要：介绍了采用新工艺生长的铟砷锑厚膜单晶。我公司采用和室温锑化铟探测器相同的工艺结构将其制成了高灵敏、非致冷型光导探测器,并对它的光电性能和光谱响应率进行了测试。将该探测器与室温锑化铟、致冷锑化铟以及硒化铅探测器作了对比,所得数据为工作在中远红外波段(5~12μm)范围内的铟砷锑探测器的更广泛应用提供了可靠的依据。An Indium Arsenic Antimony （InAsSb） thick film single crystal grown by new technology was presented. With this material, a highly sensitive uncooled photoconductive detector was made by using the same process as that of room temperature InSb detectors. The photoelectric properties and spectral responsivity of the detector were measured and compared with those of the room temperature InSb detector, the cooled InSb detector and the PbSe detector. The obtained data provided a reliable basis for the wider application of InAsSb detectors operating in the mid and long infrared waveband （5-12μm）.

关 键 词：铟砷锑厚膜单晶 光电性能 光谱响应率 发展前景 

分 类 号：TN215[电子电信—物理电子学]