Influence of dynamic power dissipation on Si MRM modulation characteristics  

作　　者：Byung-Min Yu Myungjin Shin Min-Hyeong Kim Lars Zimmermann Woo-Young Choi 

机构地区：[1]Department of Electrical and Electronic Engineering,Yonsei University [2]Innovations for High Performance Microelectronics (IHP)

出　　处：《Chinese Optics Letters》2017年第7期42-45,共4页中国光学快报（英文版）

基　　金：supported by the National Research Foundation of Korea grant funded by the Korean Ministry of Science,ICT and Future Planning(No.2015R1A2A2A01007772);the Materials andParts Technology R&D Program funded by the Korean Ministry of Trade,Industry&Energy(Project No.10065666)

摘　　要：We experimentally observe that Si micro-ring modulator（MRM） modulation characteristics are strongly influenced by the modulation data rate and the data pattern and determine this influence is due to the temperature increase caused by dynamic power dissipation within the Si MRM device. We also quantitatively determine the amount of Si MRM resonance wavelength shift due to different modulation data rates, data patterns, and modulation voltages. Our results should be of great help for achieving reliable and optimal modulation characteristics for Si MRMs.We experimentally observe that Si micro-ring modulator（MRM） modulation characteristics are strongly influenced by the modulation data rate and the data pattern and determine this influence is due to the temperature increase caused by dynamic power dissipation within the Si MRM device. We also quantitatively determine the amount of Si MRM resonance wavelength shift due to different modulation data rates, data patterns, and modulation voltages. Our results should be of great help for achieving reliable and optimal modulation characteristics for Si MRMs.

关 键 词：dissipation modulator quantitatively heating Figure thick electrically fabrication photonics buried 

分 类 号：TN761[电子电信—电路与系统]