Spectroscopic Understanding of Structural and Electrical Property Variations in Dopant-Free ZnO Films  

作　　者：Hyegyeong Kim JiWoong Kim Dooyong Lee Won-Jae Lee Jong-Seong Bae Jaekwang Lee Sungkyun Park 

机构地区：[1]Department of Physics, Pusan National University [2]Department of Nano Engineering & Electronic Research Center, Dong-Eui University [3]Busan Center, Korea Basic Science Institute

出　　处：《Journal of Materials Science & Technology》2017年第6期523-526,共4页材料科学技术（英文版）

基　　金：supported in part by NRF Korea (No. NRF2015R1D1A1A01058672);Korea Atomic Energy Research Institute;supported by the GPF Program (No. 2015H1A2A1034200) of NRF

摘　　要：Physical property variation in dopant-free ZnO films was investigated. Film annealing under various environments（O_2, in-Air, N2 and vacuum） resulted in better crystallinity than in the as-grown film. In particular, the film annealed under the N_2 environment showed better crystallinity and electrical properties than films annealed in other environments. Based on spectroscopic analysis, we found a correlation between physical（structural, electrical） and chemical properties： The crystallinity of ZnO films is closely related to ZnO bonding, whereas carrier concentration is associated with VO（oxygen vacancy）.Physical property variation in dopant-free ZnO films was investigated. Film annealing under various environments（O_2, in-Air, N2 and vacuum） resulted in better crystallinity than in the as-grown film. In particular, the film annealed under the N_2 environment showed better crystallinity and electrical properties than films annealed in other environments. Based on spectroscopic analysis, we found a correlation between physical（structural, electrical） and chemical properties： The crystallinity of ZnO films is closely related to ZnO bonding, whereas carrier concentration is associated with VO（oxygen vacancy）.

关 键 词：ZnO films Annealing Oxygen vacancies Environmental stability 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TQ132.41[化学工程—无机化工]