ZnO_(1-x)Te_x and ZnO_(1-x)S_x semiconductor alloys as competent materials for opto-electronic and solar cell applications:a comparative analysis  

作　　者：Utsa Das Partha P.Pal 

机构地区：[1]Department of Electronics,Calcutta University [2]St.Mary's Technical Campus Kolkata

出　　处：《Journal of Semiconductors》2017年第8期1-5,共5页半导体学报（英文版）

摘　　要：ZnO1-xTex ternary alloys have great potential to work as a photovoltaic （PV） absorber in solar cells. ZnOl-xSx is also a ZnO based alloy that have uses in solar cells. In this paper we report the comparative study of various parameters of ZnO 1-x Tex and ZnO 1-x Sx for selecting it to be a competent material for solar cell applica- tions. The parameters are mainly being calculated using the well-known VCA （virtual crystal approximation） and VBAC （Valence Band Anti-Crossing） model. It was certainly being analysed that the incorporation of Te atoms produces a high band gap lower than S atoms in the host ZnO material. The spin-orbit splitting energy value of ZnOl-xTex was found to be higher than that of ZnOl-xSx. Beside this, the strain effects are also higher in ZnO^-xTex than ZnOl-xSx. The remarkable notifying result which the paper is reporting is that at a higher per- centage of Te atoms in ZnOl-xTex, the spin-orbit splitting energy value rises above the band gap value, which signifies a very less intemal carrier recombination that decreases the leakage current and increases the efficiency of the solar cell. Moreover, it also covers a wide wavelength range compared to ZnO1-x Sx.ZnO1-xTex ternary alloys have great potential to work as a photovoltaic （PV） absorber in solar cells. ZnOl-xSx is also a ZnO based alloy that have uses in solar cells. In this paper we report the comparative study of various parameters of ZnO 1-x Tex and ZnO 1-x Sx for selecting it to be a competent material for solar cell applica- tions. The parameters are mainly being calculated using the well-known VCA （virtual crystal approximation） and VBAC （Valence Band Anti-Crossing） model. It was certainly being analysed that the incorporation of Te atoms produces a high band gap lower than S atoms in the host ZnO material. The spin-orbit splitting energy value of ZnOl-xTex was found to be higher than that of ZnOl-xSx. Beside this, the strain effects are also higher in ZnO^-xTex than ZnOl-xSx. The remarkable notifying result which the paper is reporting is that at a higher per- centage of Te atoms in ZnOl-xTex, the spin-orbit splitting energy value rises above the band gap value, which signifies a very less intemal carrier recombination that decreases the leakage current and increases the efficiency of the solar cell. Moreover, it also covers a wide wavelength range compared to ZnO1-x Sx.

关 键 词：VBAC model semiconductor alloys band gap spin-orbit splitting energy strain solar cell 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TN304[电子电信—物理电子学]