Comparative study on the influence of AI component at GaAIAs layer for GaAs/A1GaAs photocathode  

作　　者：Yuan Xu Benkang Chang Xinlong Chen Yunsheng Qian 

机构地区：[1]School of Electronic and Optical Engineering,Nanjing University of Science and Technology [2]School of Electronics and Electrical Engineering,Nanyang Institute of Technology

出　　处：《Journal of Semiconductors》2017年第8期16-21,共6页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.91433108,61301023)

摘　　要：We designed two transmission-mode GaAs/AIGaAs photocathodes with different AlxGa1-xAs layers, one has an AlxGal-xAs layer with the Al component ranging from 0.9 to 0, and the other has a fixed AI component 0.7. Using the first-principle method, we calculated the electronic structure and absorption spectrum ofAlx Ga1-x As at x = 0, 0.25, 0.5, 0.75 and 1, calculation results suggest that with the increase of the A1 component, the band gap of AlxGa1-xAs increases. Then we activated the two samples, and obtained the spectral response curves and quantum efficiency curves; it is found that sample 1 has a better shortwave response and higher quantum efficiency at short wavelengths. Combined with the band structure diagram of the transmission-mode GaAs/AIGaAs photo- cathode and the fitted performance parameters, we analyze the phenomenon. It is found that the transmission-mode GaAs/AlGaAs photocathode with variable AI component and various doping structure can form a two-stage built-in electric field, which improves the probability of shortwave response photoelectrons escaping to the vacuum. In con- clusion, such a structure reduces the influence of back-interface recombination, improves the shortwave response of the transmission-mode photocathode.We designed two transmission-mode GaAs/AIGaAs photocathodes with different AlxGa1-xAs layers, one has an AlxGal-xAs layer with the Al component ranging from 0.9 to 0, and the other has a fixed AI component 0.7. Using the first-principle method, we calculated the electronic structure and absorption spectrum ofAlx Ga1-x As at x = 0, 0.25, 0.5, 0.75 and 1, calculation results suggest that with the increase of the A1 component, the band gap of AlxGa1-xAs increases. Then we activated the two samples, and obtained the spectral response curves and quantum efficiency curves; it is found that sample 1 has a better shortwave response and higher quantum efficiency at short wavelengths. Combined with the band structure diagram of the transmission-mode GaAs/AIGaAs photo- cathode and the fitted performance parameters, we analyze the phenomenon. It is found that the transmission-mode GaAs/AlGaAs photocathode with variable AI component and various doping structure can form a two-stage built-in electric field, which improves the probability of shortwave response photoelectrons escaping to the vacuum. In con- clusion, such a structure reduces the influence of back-interface recombination, improves the shortwave response of the transmission-mode photocathode.

关 键 词：AlxGa1-xAs layer variable A1 component GaAs/AlGaAs photocathode quantum efficiency 

分 类 号：O462.3[理学—电子物理学]