A 500-600 MHz GaN power amplifier with RC-LC stability network  

作　　者：Ying Lu Liang Shen Jiabo Wang Ya Shen 

机构地区：[1]Nanjing Electronic Device Institute

出　　处：《Journal of Semiconductors》2017年第8期69-74,共6页半导体学报（英文版）

基　　金：supported by the National Key Basic Research Program of China(No.2014CB339901)

摘　　要：The GaAs-based TF-IPD fabrication process and equivalent lumped element circuit are utilized to re- duce the circuit size for double-section Wilkinson power divider. Ultimately the dimension of the proposed S-band power divider is reduced to 1.03 × 0.98 mm2. Its measured results show an operating fractional bandwidth of 54%, and return losses and isolation of greater than 20 dB. In addition the excess insertion loss is less than 1.1 dB. More- over the good features contain amplitude and phase equilibrium with the values of better than 0.03 dB and 1.5° separately. This miniaturized power divider could be widely used in RF/microwave circuit systems.The GaAs-based TF-IPD fabrication process and equivalent lumped element circuit are utilized to re- duce the circuit size for double-section Wilkinson power divider. Ultimately the dimension of the proposed S-band power divider is reduced to 1.03 × 0.98 mm2. Its measured results show an operating fractional bandwidth of 54%, and return losses and isolation of greater than 20 dB. In addition the excess insertion loss is less than 1.1 dB. More- over the good features contain amplitude and phase equilibrium with the values of better than 0.03 dB and 1.5° separately. This miniaturized power divider could be widely used in RF/microwave circuit systems.

关 键 词：thin film integrated passive device （TF-IPD） parameters extraction DE-EMBEDDING lumped element 

分 类 号：TN[电子电信]