PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation  

作　　者：Guo-Dong Cheng Ye Chen Long Yan Rong-Fang Shen 

机构地区：[1]Key Laboratory of Polar Materials and Devices, Ministry of Education of China, East China Normal University [2]Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Jiading Campus

出　　处：《Nuclear Science and Techniques》2017年第8期83-88,共6页核技术（英文）

基　　金：supported by the National Science Foundation of China(Nos.61076089,11505265 and 61227902);the Ministry of Education of China(SRF for ROCS,SEM)

摘　　要：Radiation damage in 4H-SiC samples implanted by 70 keV oxygen ion beams was studied using photoluminescence and electron spin resonance techniques. ESR peak of g = 2.0053 and two zero-phonon lines were observed with the implanted samples. Combined with theoretical calculations, we found that the main defect in the implanted 4H-Si C samples was oxygen-vacancy complex. The calculated defect formation energies showed that the oxygen-vacancy centers were stable in n-type 4H-Si C.Moreover, the V_(Si)O_C^0 and V_(Si)O_C^(-1) centers were optically addressable. The results suggest promising spin coherence properties for quantum information science.Radiation damage in 4H-SiC samples implanted by 70 keV oxygen ion beams was studied using photolu- minescence and electron spin resonance techniques. ESR peak of g = 2.0053 and two zero-phonon lines were observed with the implanted samples. Combined with theoretical calculations, we found that the main defect in the implanted 4H-SiC samples was oxygen-vacancy com- plex. The calculated defect formation energies showed that the oxygen-vacancy centers were stable in n-type 4H-SiC. Moreover, the VsiO0c and VsiOc-1 centers were optically addressable. The results suggest promising spin coherence properties for quantum information science.

关 键 词：4H-SIC 氧离子注入 缺陷中心 ESR 电子自旋共振技术 量子信息科学 光致发光 辐射损伤 

分 类 号：O413[理学—理论物理] O469[理学—物理]