静电增强超声雾化法制备SnO_2-MWCNTs薄膜研究  

Research on fabrication of SnO_2-MWCNTs thin film by electrostatic-enhanced ultrasonic spray

作　　者：陶强[1] 王瑞[1] 徐磊[1] 丁翔[1] 

机构地区：[1]天津工业大学纺织学院先进复合材料教育部重点实验室,天津300387

出　　处：《化工新型材料》2017年第7期84-86,共3页New Chemical Materials

基　　金：国家自然科学基金(51303131)

摘　　要：将等离子处理的多壁碳纳米管(MWCNT)超声分散于四氯化锡(SnCl_4)的乙醇盐溶液中,利用静电增强超声雾化法制得二氧化锡-多壁碳纳米管(SnO_2-MWCNTs)薄膜。采用场发射扫描电镜对其微观形貌进行表征,结果表明经等离子处理的MWCNTs团聚减弱,均匀分散于微孔薄膜上,薄膜厚度5~6μm;X-射线衍射分析结果表明制得的SnO_2-MWCNTs薄膜无其他杂质,较为纯净,晶粒尺寸3nm左右。电阻率测试结果表明薄膜的导电性能随沉积温度的升高而增大,随后趋于平缓,当沉积温度为300℃时,SnO_2-MWCNTs薄膜的电阻率低至0.01Ω·cm。The plasma treated multi-walled carbon nanotubes was ultrasonic dispersd in ethanol with tin tetrachloride solution. And SnO2-MWCNTs thin film was prepared via electrostatic-enhanced ultrasonic spray. The morphology were characterized by field emission scanning electron microscopy and the results showed that the structure of plasma treated MWCNTs agglomerate was weakened and uniformly dispersed in the films,films thickness was 5 ～ 6μm. X-ray diffraction analysis results showed that as-prepared SnO2-MWCNTs film had no impurities and was purity,its crystallite size was about 3nm. Resistivity test results showed that with increasing deposition temperature,the resistivity of film increased and then leveled off. When the deposition temperature was 300℃,the resistivity of SnO2-MWCNTs was as low as 0. 01Ω·cm.

关 键 词：多壁碳纳米管 超声分散 静电增强超声雾化 薄膜 

分 类 号：TB383.2[一般工业技术—材料科学与工程]