Anomalous in-plane magnetoresistance of electron-doped cuprate La_(2.x)Ce_xCuO_(4±δ)  

作　　者：Heshan Yu Ge He Yanli Jia Xu Zhang Jie Yuan Beiyi Zhu A.Kusmartseva F.V.Kusmartsev Kui Jin 

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences [2]University of Chinese Academy of Sciences [3]CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences [4]Department of Physics, Loughborough University [5]Collaborative Innovation Center of Quantum Matter

出　　处：《Science China(Physics,Mechanics & Astronomy)》2017年第9期70-75,共6页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the National Key Basic Research Program of China (Grant Nos. 2015CB921000, and 2016YFA0300301);the National Natural Science Foundation of China (Grant Nos. 11674374, and 11474338);the Key Research Program of Frontier Sciences, Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH008)

摘　　要：We report systematic in-plane magnetoresistance measurements on the electron-doped cuprate La2-x,.CexCuO4±δ thin films as a function of Ce doping and oxygen content in the magnetic field up to 14 T. A crossover from negative to positive magnetoresistance occurs between the doping level x = 0.07 and 0.08. Above x = 0.08, the positive magnetoresistance effect appears, and is almost indiscernible at x = 0.15. By tuning the oxygen content, the as-grown samples show negative magnetoresistance effect, whereas the optimally annealed ones display positive magnetoresistance effect at the doping level x = 0.15. Intriguingly, a linear-field dependence of in-plane magnetoresistanee is observed at the underdoping level x = 0.06, the optimal doping level x = 0. i and slightly overdoping level x = 0.11. These anomalies of in-plane magnetoresistance may be related to the intrinsic inhomogeneity in the cuprates, which is discussed in the framework of network model.We report systematic in-plane magnetoresistance measurements on the electron-doped cuprate La_(2.x)Ce_xCuO_(4±δ) thin films as a function of Ce doping and oxygen content in the magnetic field up to 14 T. A crossover from negative to positive magnetoresistance occurs between the doping level x = 0.07 and 0.08. Above x = 0.08, the positive magnetoresistance effect appears, and is almost indiscernible at x = 0.15. By tuning the oxygen content, the as-grown samples show negative magnetoresistance effect, whereas the optimally annealed ones display positive magnetoresistance effect at the doping level x = 0.15. Intriguingly, a linear-field dependence of in-plane magnetoresistance is observed at the underdoping level x = 0.06, the optimal doping level x = 0.1 and slightly overdoping level x = 0.11. These anomalies of in-plane magnetoresistance may be related to the intrinsic inhomogeneity in the cuprates, which is discussed in the framework of network model.

关 键 词：electron-doped cuprates negative magnetoresistance linear magnetoresistance 

分 类 号：O469[理学—凝聚态物理]