Proton radiation effect on GaAs/AlGaAs core–shell ensemble nanowires photo-detector  

作　　者：谭丽英 黎发军 谢小龙 周彦平 马晶 

机构地区：[1]National Key Laboratory of Tunable Laser Technology,Harbin Institute of Technology,Harbin 150001,China

出　　处：《Chinese Physics B》2017年第8期333-336,共4页中国物理B（英文版）

摘　　要：We demonstrate that the GaAs/AlGaAs nanowires（NWs） ensemble is fabricated into photo-detectors. Current–voltage（I–V） characteristics are measured on Ga As/Al Ga As core–shell ensemble NW photo-detectors at room-temperature before and after 1-MeV proton irradiation with fluences from 1.0 × 10^（13） cm^（-2） to 5.0 × 10^（14） cm^（-2）. The degradation of photocurrent suggests that the point defects induced by proton radiation could cause both carrier lifetime and carrier mobility to decrease synchronously. Comparing with a GaAs quantum well, the degradations of light and dark current for the irradiated NWs photo-detector indicate that NWs material is a preferable potential candidate for space applications.We demonstrate that the GaAs/AlGaAs nanowires（NWs） ensemble is fabricated into photo-detectors. Current–voltage（I–V） characteristics are measured on Ga As/Al Ga As core–shell ensemble NW photo-detectors at room-temperature before and after 1-MeV proton irradiation with fluences from 1.0 × 10^（13） cm^（-2） to 5.0 × 10^（14） cm^（-2）. The degradation of photocurrent suggests that the point defects induced by proton radiation could cause both carrier lifetime and carrier mobility to decrease synchronously. Comparing with a GaAs quantum well, the degradations of light and dark current for the irradiated NWs photo-detector indicate that NWs material is a preferable potential candidate for space applications.

关 键 词：radiation effect lifetime damage coefficient mobility damage coefficient radiation damage 

分 类 号：TN36[电子电信—物理电子学]