A theoretical and experimental evaluation of Ⅲ–nitride solar-blind UV photocathode  被引量:1

A theoretical and experimental evaluation of Ⅲ–nitride solar-blind UV photocathode

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作  者:任彬 郭晖 石峰 程宏昌 刘晖 刘健 申志辉 史衍丽 刘培 

机构地区:[1]Science and Technology on Low-Light-Level Night Vision Laboratory,Xi'an 710065,China [2]Department of Physics,Beijing Institute of Technology.Beijing 100081,China [3]Kunming Institute of Physics,Kunming 650223,China [4]Institute of Electron Engineering and Photoelectric Technology,Nanjing University of Science and Technology,Nanjing 210094,China [5]Chongqing Optoelectronics Research Institute,Chongqing 400060,China [6]Newcastle University Business School,Newcastle,The UK

出  处:《Chinese Physics B》2017年第8期557-560,共4页中国物理B(英文版)

基  金:supported by the National Natural Science Foundation of China(Grant No.10974015);the National Defense Pre-Research Foundation of China(Grant No.9140C380502150C38002)

摘  要:We have developed a superior solar-blind ultraviolet (UV) photocathode with an AlxGa1_xrN photocathode (x ~ 0.45) in semi-transparent mode, and assessed spectra radiant sensitivity related to practical use. Betbre being grown over a basal plane sapphire substrate by low-pressure metal organic chemical vapor deposition (MOCVD), a reasonable design was made to the photocathode epitaxy structure, focusing on the AlxGa1_xN: Mg active layer, then followed by a comprehen- sive analysis of the structural and optical characterization. The spectra radiant sensitivity is peaked of 41.395 mA/W at wavelength 257 nm and then decreases by about 3 to 4 decades at 400 nm demonstrating the ability of this photocathode for solar-blind application prospects.We have developed a superior solar-blind ultraviolet (UV) photocathode with an AlxGa1_xrN photocathode (x ~ 0.45) in semi-transparent mode, and assessed spectra radiant sensitivity related to practical use. Betbre being grown over a basal plane sapphire substrate by low-pressure metal organic chemical vapor deposition (MOCVD), a reasonable design was made to the photocathode epitaxy structure, focusing on the AlxGa1_xN: Mg active layer, then followed by a comprehen- sive analysis of the structural and optical characterization. The spectra radiant sensitivity is peaked of 41.395 mA/W at wavelength 257 nm and then decreases by about 3 to 4 decades at 400 nm demonstrating the ability of this photocathode for solar-blind application prospects.

关 键 词:PHOTOCATHODE Ⅲ-nitride solar-blind UV 

分 类 号:TN23[电子电信—物理电子学]

 

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