掺铒富硅氧化硅发光器件电致发光衰减机制  

Decay mechanism of the erbium-doped silicon-rich silicon oxide electroluminescence device

作　　者：张慧玉[1] 赵静[1] 郭强[1] 刘海旭[1] 丁文革[1] ZHANG Huiyu ZHAO Jing GUO Qiang LIU Haixu DING Wenge(College of Physics Science and Technology, Hebei University, Baoding 071002, China)

机构地区：[1]河北大学物理科学与技术学院,河北保定071002

出　　处：《河北大学学报（自然科学版）》2017年第4期360-363,共4页Journal of Hebei University(Natural Science Edition)

基　　金：河北省科技计划项目(13214315);河北省高校科学技术研究项目(QN20131115);教育部博士点基金资助项目(20131301120003)

摘　　要：首先采用多靶射频磁控共溅射结合后退火工艺制备了掺Er富硅氧化硅MIS(金属-绝缘体-半导体结构)电致发光器件,然后通过电致发光(EL)以及电流-电压(I-U)特性测量对发光器件的光电性能进行表征.最后,通过对比不同富硅含量的发光器件的载流子输运机制,并通过分析器件中的电荷俘获过程,对富硅氧化硅器件中铒离子电致发光的激发和猝灭机制进行了解释.结果表明:富硅的存在改变了MIS发光器件中的载流子输运过程,造成外加电场下注入的电子能量降低,进而降低Er离子发光中心的激发效率;而富硅引入的缺陷态会引起电荷俘获及俄歇效应,也会使得发光中心发生非辐射复合过程.The metal insulator semicsnductor light emitting diod （MIS-I.ED） with the erbium-doped silicom-rich silicom oxide was fabricated by radio frequency co-sputtering combined with post-annealing technique. The luminescence and electrical properties of the device were characterized by electroluminescence （El.） spectra and current-voltage measurement. Carrier transport and charge trapping mechanisms of the LEDs with different excess silicon content were investigated. Excitation and quenching mechanisms of the electroluminescence from erbium ions in the device were also studied and explained. The results in- dicated that, with the excess silicon in the MIS-LEDs, the conduction of carriers transform from Fowler- Nordheim tunneling to hopping conduction and the quenching of the EL can be attributed to the energy re- duction of the injected electrons and the lowered excitation efficiency of the erbium ions. In addition, the Auger effect induced by charge trapping would also account for the nonradiative recombination processes.

关 键 词：掺铒富硅氧化硅 电致发光 载流子输运 电荷俘获 

分 类 号：O469[理学—凝聚态物理]