碲镉汞薄膜减薄损伤的扫描电镜研究  

Study of Damage of Mercury Cadmium Telluride Films after Polishing by SEM

作　　者：许秀娟[1] 周哲 折伟林[1] 付伟[1] 李春领[1] 

机构地区：[1]华北光电技术研究所,北京100015 [2]中电科电子装备集团有限公司,北京100070

出　　处：《红外》2017年第8期19-22,共4页Infrared

摘　　要：对由碲镉汞薄膜减薄工艺导致的损伤层的研究至关重要。采用扫描电镜研究了碲镉汞薄膜经减薄工艺后的损伤层,获得了非常有价值的实验结果。结果对由碲镉汞薄膜减薄工艺形成损伤层的认识和后续的工艺优化具有非常重要的指导意义。To study the damage of a Mercury Cadmium Telluride （HgCdTe） film caused by its thinning technology is most important. By using the Scanning Electron Microscopy （SEM） to study the damage layer of the HgCdTe film after thinning, valuable experimental results are obtained. These results are of great significance both to the understanding of the damage of HgCdTe films caused by thinning technology and to the subsequent optimization of the related thinning technology.

关 键 词：碲镉汞 减薄 损伤层 扫描电镱透射电镜 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TN215[电子电信—物理电子学]