平面SiC陶瓷切槽--推磨加工技术可行性研究  

Feasibility Study of Processing Technology for Grooving and Axial Pushing-grinding Planar SiC Ceramics

作　　者：田欣利[1] 杨绪啟 姚巨坤[1] 江宏亮[1] 

机构地区：[1]装甲兵工程学院

出　　处：《工具技术》2017年第8期22-26,共5页Tool Engineering

基　　金：国家自然科学基金(51475474)

摘　　要：提出了基于裂纹扩展效应的平面SiC陶瓷切槽—推磨复合加工新技术,开展了该技术的可行性研究。重点研究了推磨角、凸缘壁厚、砂轮转速、推磨深度、推磨速度对去除凸缘过程中块占比和轴向推磨力的关系,得出了上述工艺参数对推挤—磨削复合作用中推挤作用所占比重的影响规律。借助Walker公式分析了该技术的加工机理。采用该技术加工出了SiC陶瓷平面,测出了表面粗糙度,从而证实了该新技术可广泛应用于平面陶瓷磨削的可能性。A new technique for grooving and axial pushing-grinding planar SiC based on crack propagation was put forward, and its feasibility study was carried out. The influence of pushing-grinding angle, flange thickness, grinding wheel speed,pushing-grinding depth,pushing-grinding velocity on the proportion of block-like debris and the axial pushing-grind- ing force was studied emphatically, and the law of how the above processing parameters affect the proportion of pushing effects was concluded. The technique＇ s mechanism was also analysed through Walker model. With the technique, a work- piece was machined and its surface roughness was measured, thus proved that the wide application of this new technique is feasible.

关 键 词：裂纹扩展 平面SiC 块占比 轴向推磨力 表面粗糙度 

分 类 号：TG580.1[金属学及工艺—金属切削加工及机床] TH145.1[一般工业技术—材料科学与工程]