混合电路形式的Ku波段低噪声放大器的设计  

Design of Ku Band Low Noise Amplifier with the Mixed Circuit Configuration

作　　者：吴志华[1,2] 王自力[1,2] 王生旺[1,2] 何川[1,2] 丁晓杰[1,2] 

机构地区：[1]中国电子科技集团公司超导电子技术重点实验室,合肥230043 [2]中国电子科技集团公司第十六研究所,合肥230043

出　　处：《微波学报》2017年第4期70-73,共4页Journal of Microwaves

摘　　要：采用低噪声HEMT场效应管和低噪声放大器单片的混合电路形式开展Ku波段低噪声放大器的设计。设计出的低噪声放大器产品取得了很低的噪声(噪声系数≤1.29 d B)、较大的线性动态范围、较小的增益带内起伏和尺寸等优越性能,且在40 GHz频率范围内无条件稳定。该产品成功应用于某型号装备中,很好地提高了该装备的信号接收能力。它也可应用于相应频段的卫星通讯、空间遥感及雷达等的接收系统中。The mixed circuit configuration is adopted in the design of Ku band low noise amplifier with the low noise HEMT FET and MMIC LNA. The designed low noise amplifier has the excellent performance of very low noise（Noise factor≤1. 29 d B）,large linear dynamic range,small ripple of gain in the working band and size,it＇s unconditionally stable within the frequency range of 40 GHz. The production is used in some model equipment with success,it improves the receptivity of the equipment commendably. It can also be used in the receiving systems of satellite communication,space remote sensing and radar in the same frequency band.

关 键 词：混合电路 KU波段 低噪声 放大器 

分 类 号：TN722.3[电子电信—电路与系统]