4阶Colpitts MOS管混沌电路设计  

Four Order Colpitts MOS Chaotic Circuit Design

作　　者：肖鹏[1] 冯烨佳 李文石[1] 

机构地区：[1]苏州大学电子信息学院,江苏苏州215006

出　　处：《电子器件》2017年第2期337-341,共5页Chinese Journal of Electron Devices

基　　金：江苏省2015年度普通高校研究生科研创新计划项目(省立校助)(KYLX15_1244);2014年江苏省自然科学基金项目(BK20141196)

摘　　要：仅增加一个线性电容并联于单电感两端,使3阶Colpitts MOS管电路成为4阶混沌电路。该电容与电感形成选频谐振子电路,便于产生混沌信号,可扩展存在混沌的参数取值范围。结合新电路归一化状态方程,分别计算电感电流和三只电容端压的4个李指数,探讨关键参数对该混沌电路的影响。对比MATLAB仿真数据与实测单MOS管电路的输出,一致性地显示4阶混沌特有的混沌吸引子已经实现。To change classical 3 order Colpitts MOS oscillator into 4 order chaotic circuit by adding one capacitance in parallel of an old inductance.The built frequency-selected net brings new advantages which is easy to generate chaotic signals and to extend the range of parameters on chaos being.Combining our new circuit’s equations,total four Lyapunov exponents are computed for the current of inductance and the voltages of three capacitors.Then we explore the influences between this circuit and its key parameter sets.Our simulation results in MATLAB show the same pear-shaped phase-charts or attractors compared with the tested data from 2N6659 type-MOS four order chaotic circuit by Oscillator of Agilent 5462 A.

关 键 词：Colpitts电路 4阶混沌 MOS 李指数 实测数据 

分 类 号：TN710[电子电信—电路与系统]