一种0.13μmCMOS K波段LNA  

A 0. 13 μm CMOS K-Band LNA

作　　者：陈婷[1] 何进[1] 陈鹏伟[1] 王豪[1] 常胜[1] 黄启俊[1] 

机构地区：[1]武汉大学物理科学与技术学院,武汉430072

出　　处：《微电子学》2017年第4期465-468,共4页Microelectronics

基　　金：国家自然科学基金资助项目(61204096;61404094);中央高校基本科研资助项目(2042015kf0174;2042014kf0238);中国博士后科学基金资助项目(2012T50688);湖北省自然科学基金资助项目(2014CFB694);江苏省科学基金资助项目(BK20141218)

摘　　要：基于0.13μm CMOS工艺,设计了一种工作于K波段的低噪声放大器。输入匹配采用一种改良π型匹配网络,输出匹配采用L+π型匹配网络,避免了电容击穿的风险和源端大电感的引入。电路使用级间L型匹配的方式,利用第一级电路的输出寄生电容和第二级电路的输入寄生电容,有效地提高了电路的增益,降低了噪声。仿真结果表明,该低噪声放大电路为单电源1.5 V供电,在27 GHz频率处的增益为27 d B,噪声系数为3.75 d B,输入回波损耗和输出回波损耗分别为-11.1 d B和-20.5 d B。Based on a 0. 13 μm CMOS technology,a K-band low noise amplifier（ LNA） was designed. To avoid the risk of breakdown of capacitors and the introduction of big source inductors,an improved π-type matching network was adopted for the input matching network while a L ＋ π-type matching network was used for the output matching network.Utilizing the first stage output parasitic capacitances and the second stage input parasitic capacitances,the circuit achieved a higher gain and a lower noise figure with inter-stage L matching. It had been shown that the LNA circuit had achieved a gain above 27 d B,a noise figure of 3. 75 d B,an input return loss of-11. 1 d B,an output return loss of-20. 5 d B at the frequency of 27 GHz. And the circuit needed only one power supply of 1. 5 V.

关 键 词：K波段 CMOS 低噪声放大器 改良π型匹配 级间L匹配 

分 类 号：TN722.3[电子电信—电路与系统]