基于0.15μm pHEMT的超宽带低噪声放大器  

An Ultra Wideband 0. 15 μm p HEMT Low Noise Amplifier

作　　者：张会[1] 钱国明[1] 

机构地区：[1]南京邮电大学电子科学与工程学院,南京210003

出　　处：《微电子学》2017年第4期478-482,共5页Microelectronics

基　　金：国家自然科学基金资助项目(11403080)

摘　　要：采用RC负反馈、源极电感负反馈等方法,设计并制作了一种基于MMIC技术的3～15 GHz超宽带低噪声放大器,在超宽带范围内实现了优良的回波损耗和平坦的高增益。采用0.15μm Ga As p HEMT工艺进行设计,该放大器的芯片尺寸为2 mm×1 mm,直流功耗为200 m W。在片测试结果表明,带内增益高达28 d B,4～12 GHz带宽范围内的噪声系数低于2 d B,输入/输出回波损耗大于15 d B,测试结果与仿真结果十分吻合。该低噪声放大器可应用于S,C,X,Ku波段外差接收机以及毫米波、亚毫米波接收机的中频模块。Using the RC feedback network and source inductive degeneration topology,a 3-15 GHz ultra wideband MMIC low noise amplifier with flat high gain and low return loss was designed and fabricated. Based on the 0. 15 μm Ga As p HEMT process,the chip dissipated 200 m W DC power while it occupied a die area of 2 mm × 1 mm. Measured results demonstrated that the proposed MMIC LNA had a gain of 28 d B over the range of 3 ～ 15 GHz. An excellent input/output return loss better than 15 d B and a low noise figure less than 2 d B in the range of 4 ～ 12 GHz were obtained. It was obvious that the measured results matched quite well with the simulation results over the whole band. The LNA could be used extensively in the S/C/X/Ku-band heterodyne receivers or inside the IF module for millimeter and sub-millimeter wave receivers.

关 键 词：赝同晶高电子迁移率晶体管 低噪声放大器 单片微波集成电路 超宽带 

分 类 号：TN386[电子电信—物理电子学] TN722.3