Design of double-layer active frequency-selective surface with PIN diodes for stealth radome  

作　　者：邓斌 陈健 

机构地区：[1]Department of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China [2]Nanjing Research Institute of Electronics Technology,Nanjing 210039,China

出　　处：《Chinese Physics B》2017年第9期169-174,共6页中国物理B（英文版）

基　　金：Project supported by the National Basic Resarch Program of China(Grant No.2014CB339800);the National Natural Science Foundation of China(Grant No.11173015)

摘　　要：An experimental double-layer active frequency-selective surface（AFSS） for stealth radome is proposed. The AFSS is a planar structure which is composed of a fixed frequency-selective surface（FSS）, a PIN diodes array, and a DC bias network. The AFSS elements incorporating switchable PIN diodes are discussed. By means of controlling the DC bias network, it is possible to switch the frequency response for reflecting and transmitting. Measured and simulated data validate that when the incidence angle varies from 0°to 30° the AFSS produces more than-11.5 dB isolation across6–18 GHz when forward biased. The insertion loss（IL） is less than 0.5 dB across 10–11 GHz when reverse biased.An experimental double-layer active frequency-selective surface（AFSS） for stealth radome is proposed. The AFSS is a planar structure which is composed of a fixed frequency-selective surface（FSS）, a PIN diodes array, and a DC bias network. The AFSS elements incorporating switchable PIN diodes are discussed. By means of controlling the DC bias network, it is possible to switch the frequency response for reflecting and transmitting. Measured and simulated data validate that when the incidence angle varies from 0°to 30° the AFSS produces more than-11.5 dB isolation across6–18 GHz when forward biased. The insertion loss（IL） is less than 0.5 dB across 10–11 GHz when reverse biased.

关 键 词：frequency-selective surface（FSS） active frequency-selective surface（AFSS） PIN diode stealth radome 

分 类 号：TN312.4[电子电信—物理电子学]