Optical and defect properties of S-doped and Al-doped GaSe crystals  

作　　者：黄昌保 吴海信 倪友保 王振友 陈诗静 

机构地区：[1]Anhui Provincial Key Laboratory of Photonic Devices and Materials,Anhui Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Hefei 230031,China

出　　处：《Chinese Physics B》2017年第9期248-251,共4页中国物理B（英文版）

基　　金：Project supported by Knowledge Innovation Program of the Chinese Academy of Sciences(Grant No.CXJJ-16M128)

摘　　要：S-doped and Al-doped GaSe crystals are promising materials for their applications in nonlinear frequency conversion devices. The optical and defect properties of pure, S-doped, and Al-doped GaSe crystals were studied by using photoluminescence（PL） and Fourier transform infrared spectroscopy（FT-IR）. The micro-topography of（0001） face of these samples was observed by using scanning electron microscope（SEM） to investigate the influence of the doped defects on the intralayer and interlayer chemical bondings. The doped S or Al atoms form the SSe^0 or AlGa^＋1） substitutional defects in the layer GaSe structure, and the positive center of AlGa-^＋1 could induce defect complexes. The incorporations of S and Al atoms can change the optical and mechanical properties of the GaSe crystal by influencing the chemical bonding of the layer structure. The study results may provide guidance for the crystal growth and further applications of S-doped and Al-doped GaSe crystals.S-doped and Al-doped GaSe crystals are promising materials for their applications in nonlinear frequency conversion devices. The optical and defect properties of pure, S-doped, and Al-doped GaSe crystals were studied by using photoluminescence（PL） and Fourier transform infrared spectroscopy（FT-IR）. The micro-topography of（0001） face of these samples was observed by using scanning electron microscope（SEM） to investigate the influence of the doped defects on the intralayer and interlayer chemical bondings. The doped S or Al atoms form the SSe^0 or AlGa^＋1） substitutional defects in the layer GaSe structure, and the positive center of AlGa-^＋1 could induce defect complexes. The incorporations of S and Al atoms can change the optical and mechanical properties of the GaSe crystal by influencing the chemical bonding of the layer structure. The study results may provide guidance for the crystal growth and further applications of S-doped and Al-doped GaSe crystals.

关 键 词：doped GaSe crystals defect optical properties mechanical properties 

分 类 号：O734[理学—晶体学] TM912.2[电气工程—电力电子与电力传动]