Performance enhancement of CMOS terahertz detector by drain current  

作　　者：张行行 纪小丽 廖轶明 彭静宇 朱晨昕 闫锋 

机构地区：[1]College of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China

出　　处：《Chinese Physics B》2017年第9期491-495,共5页中国物理B（英文版）

基　　金：Project supported by the National Key R&D Program of China(Grant No.2016YFB-0402403);the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20141321);CAST Project,China(Grant No.08201601);the National Science Foundation for Young Scholars of China(Grant No.61404072)

摘　　要：In this paper, we study the effect of the drain current on terahertz detection for Si metal-oxide semiconductor fieldeffect transistors（MOSFETs） both theoretically and experimentally. The analytical model, which is based on the smallsignal equivalent circuit of MOSFETs, predicts the significant improvement of the voltage responsivity Rv with the bias current. The experiment on antennas integrated with MOSFETs agrees with the analytical model, but the Rv improvement is accompanied first by a decrease, then an increase of the low-noise equivalent power（NEP） with the applied current. We determine the tradeoff between the low-NEP and high-Rv for the current-biased detectors. As the best-case scenario, we obtained an improvement of about six times in Rv without the cost of a higher NEP. We conclude that the current supply scheme can provide high-quality signal amplification in practical CMOS terahertz detection.In this paper, we study the effect of the drain current on terahertz detection for Si metal-oxide semiconductor fieldeffect transistors（MOSFETs） both theoretically and experimentally. The analytical model, which is based on the smallsignal equivalent circuit of MOSFETs, predicts the significant improvement of the voltage responsivity Rv with the bias current. The experiment on antennas integrated with MOSFETs agrees with the analytical model, but the Rv improvement is accompanied first by a decrease, then an increase of the low-noise equivalent power（NEP） with the applied current. We determine the tradeoff between the low-NEP and high-Rv for the current-biased detectors. As the best-case scenario, we obtained an improvement of about six times in Rv without the cost of a higher NEP. We conclude that the current supply scheme can provide high-quality signal amplification in practical CMOS terahertz detection.

关 键 词：drain current CMOS terahertz detectors voltage responsivity noise equivalent power 

分 类 号：O441[理学—电磁学]