机构地区:[1]Tsinghua National Laboratory for Information Science and Technology,Department of Microelectronics and Nanoelectronics Institute of Microelectronics,Tsinghua University,Beijing 100084,China [2]Key Laboratory of Particle Astrophysics,Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100049,China [3]University of Chinese Academy of Sciences,Beijing 100049,China
出 处:《Chinese Physics B》2017年第9期496-501,共6页中国物理B(英文版)
基 金:Project supported by the National Natural Science Foundation of China(Grant No.11653001);the National Basic Research Program of China(Grant No.2011CBA00304);Tsinghua University Initiative Scientific Research Program,China(Grant No.20131089314)
摘 要:The superconducting quantum interference device(SQUID) amplifier is widely used in the field of weak signal detection for its low input impedance, low noise, and low power consumption. In this paper, the SQUIDs with identical junctions and the series SQUIDs with different junctions were successfully fabricated. The Nb/Al-AlOx/Nb trilayer and input Nb coils were prepared by asputtering equipment. The SQUID devices were prepared by a sputtering and the lift-off method.Investigations by AFM, OM and SEM revealed the morphology and roughness of the Nb films and Nb/Al-AlOx/Nb trilayer.In addition, the current–voltage characteristics of the SQUID devices with identical junction and different junction areas were measured at 2.5 K in the He^3 refrigerator. The results show that the SQUID modulation depth is obviously affected by the junction area. The modulation depth obviously increases with the increase of the junction area in a certain range. It is found that the series SQUID with identical junction area has a transimpedance gain of 58 Ω approximately.The superconducting quantum interference device(SQUID) amplifier is widely used in the field of weak signal detection for its low input impedance, low noise, and low power consumption. In this paper, the SQUIDs with identical junctions and the series SQUIDs with different junctions were successfully fabricated. The Nb/Al-AlOx/Nb trilayer and input Nb coils were prepared by asputtering equipment. The SQUID devices were prepared by a sputtering and the lift-off method.Investigations by AFM, OM and SEM revealed the morphology and roughness of the Nb films and Nb/Al-AlOx/Nb trilayer.In addition, the current–voltage characteristics of the SQUID devices with identical junction and different junction areas were measured at 2.5 K in the He^3 refrigerator. The results show that the SQUID modulation depth is obviously affected by the junction area. The modulation depth obviously increases with the increase of the junction area in a certain range. It is found that the series SQUID with identical junction area has a transimpedance gain of 58 Ω approximately.
关 键 词:superconducting quantum interference device(SQUID) Josephson junction transition edge sensor
分 类 号:TL81[核科学技术—核技术及应用]
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