Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs  

作　　者：李建飞 吕元杰 李长富 冀子武 庞智勇 徐现刚 徐明升 

机构地区：[1]School of Microelectronics,Shandong University,Jinan 250100,China [2]National Key Laboratory of Application Specific Integrated Circuit(ASIC),Hebei Semiconductor Research Institute,Shijiazhuang 050051,China [3]Key Laboratory of Functional Crystal Materials and Device(Ministry of Education),Shandong University,Jinan 250100,China [4]School of Physics and Optoelectronics,South China University of Technology,Guangzhou 510640,China

出　　处：《Chinese Physics B》2017年第9期515-519,共5页中国物理B（英文版）

基　　金：Project supported by the Major Research Plan of the National Natural Science Foundation of China(Grant No.91433112);the National Natural Science Foundation of China(Grant No.51672163);the Key Laboratory of Functional Crystal Materials and Device(Shandong University,Ministry of Education),China(Grant No.JG1401)

摘　　要：The photoluminescence（PL） and electrical properties of Al GaN/GaN high electron mobility transistors（HEMTs） with different Fe doping concentrations in the GaN buffer layers were studied. It was found that, at low Fe doping concentrations,the introduction of Fe atoms can result in a downward shift of the Fermi level in the GaN buffer layer, since the Fe atoms substitute Ga and introduce an FeGa^3＋/2＋ acceptor level. This results in a decrease in the yellow luminescence（YL） emission intensity accompanied by the appearance of an infrared（IR） emission, and a decrease in the off-state buffer leakage current（BLC）. However, a further increase in the Fe doping concentration will conversely result in the upward shift of the Fermi level due to the incorporation of O donors under the large flow rate of the Fe source. This results in an increased YL emission intensity accompanied by a decrease in the IR emission intensity, and an increase in the BLC. The intrinsic relationship between the PL and BLC characteristics is expected to provide a simple and effective method to understand the variation of the electrical characteristic in the modulation Fe-doped HEMTs by optical measurements.The photoluminescence（PL） and electrical properties of Al GaN/GaN high electron mobility transistors（HEMTs） with different Fe doping concentrations in the GaN buffer layers were studied. It was found that, at low Fe doping concentrations,the introduction of Fe atoms can result in a downward shift of the Fermi level in the GaN buffer layer, since the Fe atoms substitute Ga and introduce an FeGa^3＋/2＋ acceptor level. This results in a decrease in the yellow luminescence（YL） emission intensity accompanied by the appearance of an infrared（IR） emission, and a decrease in the off-state buffer leakage current（BLC）. However, a further increase in the Fe doping concentration will conversely result in the upward shift of the Fermi level due to the incorporation of O donors under the large flow rate of the Fe source. This results in an increased YL emission intensity accompanied by a decrease in the IR emission intensity, and an increase in the BLC. The intrinsic relationship between the PL and BLC characteristics is expected to provide a simple and effective method to understand the variation of the electrical characteristic in the modulation Fe-doped HEMTs by optical measurements.

关 键 词：AlGaN/GaN HEMT Fe-doping photoluminescence leakage current 

分 类 号：TN32[电子电信—物理电子学]