Lowering the driving voltage and improving the luminance of blue fluorescent organic light-emitting devices by thermal annealing a hole injection layer of pentacene  

作　　者：高建 于倩倩 张娟 刘洋 贾若飞 韩俊 吴晓明 华玉林 印寿根 

机构地区：[1]School of Materials Science and Engineering,Tianjin University of Technology,Tianjin 300222,China [2]Key Laboratory of Display Materials and Photoelectric Devices,Ministry of Education,Tianjin 300222,China [3]Tianjin Key Laboratory of Photoelectric Materials and Devices,Tianjin 300222,China

出　　处：《Chinese Physics B》2017年第9期530-535,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.60906022);the Natural Science Foundation of Tianjin,China(Grant No.10JCYBJC01100);the Key Science and Technology Support Program of Tianjin,China(Grant No.14ZCZDGX00006);the National High Technology Research and Development Program of China(Grant No.2013AA014201)

摘　　要：We chose pentacene as a hole injection layer（HIL） to fabricate the high performance blue fluorescent organic lightemitting devices（OLEDs）. We found that the carrier mobility of the pentacene thin films could be efficiently improved after a critical annealing at temperature 120℃. Then we performed the tests of scanning electron microscopy, atomic force microscopy, and Kelvin probe to explore the effect of annealing on the pentacene films. The pentacene film exhibited a more crystalline form with better continuities and smoothness after annealing. The optimal device with 120℃ annealed pentacene film and n-doped electron transport layer（ETL） presents a low turn-on voltage of 2.6 V and a highest luminance of 134800 cd/m^2 at 12 V, which are reduced by 26% and improved by 50% compared with those of the control device.We chose pentacene as a hole injection layer（HIL） to fabricate the high performance blue fluorescent organic lightemitting devices（OLEDs）. We found that the carrier mobility of the pentacene thin films could be efficiently improved after a critical annealing at temperature 120℃. Then we performed the tests of scanning electron microscopy, atomic force microscopy, and Kelvin probe to explore the effect of annealing on the pentacene films. The pentacene film exhibited a more crystalline form with better continuities and smoothness after annealing. The optimal device with 120℃ annealed pentacene film and n-doped electron transport layer（ETL） presents a low turn-on voltage of 2.6 V and a highest luminance of 134800 cd/m^2 at 12 V, which are reduced by 26% and improved by 50% compared with those of the control device.

关 键 词：organic light-emitting device（OLED） annealing pentacene film hole injection 

分 类 号：TN383.1[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]