靶面淀积参数对真空微电子平板摄像管特性的影响  

Effect of Deposition Parameters on Performance of VME-FPC

作　　者：吕永积 邵佑军 刘光诒[2] 施化芬 

机构地区：[1]广电总局广科院光电研究所,北京102206 [2]中国科学院电子学研究所,北京100080

出　　处：《液晶与显示》2002年第4期265-269,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：国家自然科学基金资助项目 (69971 0 1 1 )

摘　　要：为了开发用于真空微电子平板摄像管的高灵敏度CdSe多层光导材料 ,改建了一台能精确控制CdSe材料的蒸发速率、厚度和基体温度的高真空蒸镀设备 ,开发了由真空热预处理 ,非真空热后处理二种处理新工艺 ,制造出了新的高性能的CdSe多层光导靶。使CdSe多层光导靶的灵敏度提高了两个数量级 ,而清晰度 (分辨率 )保持不变。In order to develop a multilayer photoconductive material based on CdSe with high light sensitivity for use in vacuum microelectronics flat panel camera tube (VME FPC), a multiple sources thermal evaporated equipment with the accurate control of evaporation ratio, thickness of thin film, and substrate temperature for the CdSe material has been designed and re installed. Meanwhile, a new annealing technology composed of the vacuum heat pre treatment (VHPT) and the non vacuum heat after treatment (NHAT) has been developed. The development in these two respects, along with other technologies, brings about a new multilayer CdSe photoconductive target with remarkable performance, A more dramatic result appeared: the sensitivity of our multilayer CdSe photoconductive target has been increased by two orders of magnitude while its resolution keeps constant. This paper will mainly focus on reporting the achievements on evaporation technology, and some experimental results related to the effect of deposition parameter on performance of VME FPC.

关 键 词：靶面淀积参数 真空微电子平板摄像管 真空热预处理 非真空热处理 CDSE 硒化镉 多层光导靶 

分 类 号：TN142[电子电信—物理电子学] TN105