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作 者:孔令仪[1] 王智会[2] 孙泽浩[2] 孙祥[2] 熊建功[3] 张创伟[3] 王康[3] 李永涛[2]
机构地区:[1]南京邮电大学通信与信息工程学院,江苏南京210023 [2]南京邮电大学理学院,江苏南京210023 [3]南京邮电大学理学院电子科学与工程学院,江苏南京210023
出 处:《化工时刊》2017年第8期1-4,45,共5页Chemical Industry Times
基 金:南京邮电大学科研项目(NY214104;NY217096);国家级大学生创新创业训练计划支持(SZDG2016005)
摘 要:采用溶胶凝胶法成功制备了Ce_(0.05)Bi_(0.95-x)Sr_xFeO_3(x=0,0.05,0.10,0.15)多铁性样品,并且对样品的XRD图谱、电滞回线、漏电流曲线及Raman光谱进行测量与研究。XRD结果表明,随着Sr离子掺杂浓度的增加,样品由钙钛矿结构转变为四方晶格结构。电滞回线显示随着Sr离子掺杂浓度的增加,样品的室温铁电性得到了改善。漏电流曲线表明Sr离子掺杂浓度的增加并不能很好地抑制漏电流的产生。通过Raman谱分析得出,Sr离子的掺杂导致Bi-O共价键结构发生变化,并且Sr离子浓度的增加使氧八面体扭曲程度加剧,进而引起了漏电机制的改变,使得样品的铁电性能发生了变化。Ce0.05Bi0.95-xSrxFeO3multiferroic samples was successfully prepared by sol -gel method (x = 0, 0. 05, 0.10, 0.15). The hysteresis loop of the sample ,XRD data, leakage current curves and Raman spectra are meas- ured and researched. XRD results show that the structure of the sample changes from perovskite structure to tetragonal lattice structure with the increase of Sr ion doping concentration. The hysteresis loop shows that the ferroelectricityof the sample has been improved with the increase of Sr ion doping concentration, at the room temperature. The leakagecurrent curve shows that the increase of Sr ion doping concentration can' t suppress the leakage current. Raman spec- trum analysis shows that the doping of Sr ions leads to the change of the Bi - 0 covalent bond structure. Moreover, the increase of Sr concentration increases the degree of distortion of the eight oxygen surface, which leads to the change of the leakage mechanism, resulting in a change in the ferroelectric properties of the sample.
关 键 词:多铁性材料 XRD 电滞回线 漏电流 RAMAN谱
分 类 号:TM221[一般工业技术—材料科学与工程]
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