达林顿晶体管应用故障分析  

Fault Analysis of Darlington Transistor

作　　者：马继铭 

机构地区：[1]西安卫光科技有限公司,陕西西安710000

出　　处：《现代工业经济和信息化》2017年第15期74-75,共2页Modern Industrial Economy and Informationization

摘　　要：针对达林顿晶体管在使用中管壳温升过高、输出电流较大,不能满足线路整机使用要求的问题,进行了电参数的测试对比及机理分析,提出了通过减小达林顿晶体管基区和发射区结深,并采用较小的硅片电阻率和高阻区厚度的方法,使达林顿晶体管关断时间toff减小,达到满足整机应用的目的。In this paper, the Darlington transistor in the use of the shell temperature rise is too high, the output current is large, can not meet the requirements of the use of the whole line of the machine, the electrical parameters of the test comparison and mechanism analysis, proposed by reducing the Linton transistor base and emitter junction depth, and the use of smaller silicon chip resistivity and high resistance area of the method, the Darlington transistor turn-off time toff reduced to meet the purpose of machine applications.

关 键 词：功率达林顿 应用分析 关断时间 

分 类 号：TN431.1[电子电信—微电子学与固体电子学]