退火温度对碳化硅涂层微观结构与形貌的影响  

Influence of Annealing Temperature on Microstructure and Morphology of SiC Coatings

作　　者：王坤[1] 王美玲[2] 刘锦云[1] 

机构地区：[1]西华大学材料科学与工程学院,四川成都610039 [2]中国核动力研究设计院反应堆燃料及材料重点实验室,四川成都610041

出　　处：《西华大学学报（自然科学版）》2017年第5期108-112,共5页Journal of Xihua University:Natural Science Edition

摘　　要：采用射频磁控溅射技术,在锆合金基体上制备厚度约为1.8μm的SiC涂层,对其在不同温度下进行退火处理。利用SEM和AFM对微观形貌进行分析,讨论不同温度对SiC涂层表面形貌的影响,利用XRD对涂层的结构进行研究。结果表明:随着退火温度从400℃升高到800℃,涂层表面粗糙度呈现先减小后增大的趋势,其中在600℃时表面粗糙度最小,为0.122μm;退火温度低于600℃时,SiC涂层不会出现晶态转变,当温度高于700℃时涂层开始出现非晶态向晶态的转变,XRD衍射图谱中开始出现SiC对应的衍射峰,且随着退火温度的升高,涂层的晶化程度进一步增大。The SiC coatings of 1.8μm were deposited by RF magnetron sputtering on the substrate of Zirconium alloy, and then were annealed at 400℃- 800℃. The SiC coatings was characterized by the AFM, SEM, and the effect of different temperature on the surface morphology of the coating was disscussed. The structure of SiC coating was analyzed by XRD. The results show that the rough-ness of SiC coating decreased first and then increased with increasing of the annealing temperature from 400℃ to 800℃ , the minimum surface roughness 0. 122 fjcm was got at 600℃ ; When the annealing temperature was lower than 600℃, SiC coating does not appear crystal transition; When the annealing temperature was higher than 700℃ ,the amorphous coating turned to crystal coating, the corre-sponding diffraction peaks of SiC appeared in XRD diffraction pattern after annealing at 700℃ , and with the increase of annealing tem-perature ,the crystallization degree of the coating is further increased.

关 键 词：碳化硅涂层 退火温度 射频磁控溅射 粗糙度 

分 类 号：TG174.4[金属学及工艺—金属表面处理] TG156.2[金属学及工艺—金属学]