Growth and Characterization of Indium Doped Zinc Oxide Films Sputtered from Powder Targets  

作　　者：彭丽萍 FANG Liang ZHAO Yan WU Weidong RUAN Haibo KONG Chunyang 

机构地区：[1]Science and Technology on Plasma Physics Laboratory, Research Center of Laser Fusion, CAEP, Mianyang 621900, China [2]Department of Applied Physics, Chongqing University, Chongqing 400030, China [3]Department of Applied physics, Chongqing Normal University, Chongqing 400047, China

出　　处：《Journal of Wuhan University of Technology(Materials Science)》2017年第4期866-870,共5页武汉理工大学学报（材料科学英文版）

基　　金：Funded by the Fundamental Research Fund for the Central Universities(No.CDJXS10102207);the National Natural Science Foundation of China(Nos.11075314,11404302 and 50942021);the Natural Science Foundation of Chongqing City(2011BA4031);the Third Stage of“211”Innovative Talent Training Project(No.S-09109);the Sharing Fund of Large-scale Equipment of Chongqing University(Nos.2010063072 and 2010121556)

摘　　要：Indium doped Zn O films were grown on quartz glass substrates by radio frequency magnetron sputtering from powder targets. Indium content in the targets varied from 1at% to 9at%. In doping on the structure, optical and electrical properties of Zn O thin films were studied. X-ray diffraction shows that all the films are hexagonal wurtzite with c-axis perpendicular to the substrates. There is a positive strain in the films and it increases with indium content. All the films show a high transmittance of 86% in the visible light region. Undoped Zn O thin film exhibits a high transmittance in the near infrared region. The transmittance of indium doped Zn O thin films decreases sharply in the near infrared region, and a cut-off wavelength can be found. The lowest resistivity of 4.3×10^（-4） Ω·cm and the highest carrier concentration of 1.86×10^（21） cm^（-3） can be obtained from Zn O thin films with an indium content of 5at% in the target.Indium doped Zn O films were grown on quartz glass substrates by radio frequency magnetron sputtering from powder targets. Indium content in the targets varied from 1at% to 9at%. In doping on the structure, optical and electrical properties of Zn O thin films were studied. X-ray diffraction shows that all the films are hexagonal wurtzite with c-axis perpendicular to the substrates. There is a positive strain in the films and it increases with indium content. All the films show a high transmittance of 86% in the visible light region. Undoped Zn O thin film exhibits a high transmittance in the near infrared region. The transmittance of indium doped Zn O thin films decreases sharply in the near infrared region, and a cut-off wavelength can be found. The lowest resistivity of 4.3×10^（-4） Ω·cm and the highest carrier concentration of 1.86×10^（21） cm^（-3） can be obtained from Zn O thin films with an indium content of 5at% in the target.

关 键 词：RF magnetron sputtering optical properties indium-doped ZnO semiconducting Ⅱ-Ⅵ materials 

分 类 号：TN304.055[电子电信—物理电子学]