n/p型掺杂非晶硅薄膜工艺优化研究  

N/p type doped amorphous silicon thin films process optimization

作　　者：何玉平[1,2] 黄海宾[2] 

机构地区：[1]南昌工程学院理学院,江西南昌330099 [2]南昌大学光伏研究院,江西南昌330031

出　　处：《南昌工程学院学报》2017年第4期28-30,共3页Journal of Nanchang Institute of Technology

摘　　要：掺杂层与硅片衬底形成发射极和后背场,掺杂层薄膜质量是影响高效率太阳电池的重要因素之一。以载玻片为衬底沉积掺杂薄膜层后样品电阻为依据对太阳能电池n/p型掺杂非晶硅薄膜主要工艺进行优化。结果表明,n型掺杂非晶硅薄膜最优工艺为电流20.5 A,气压4.0 Pa,气体流量比H2:Si H4:PH3=50∶2∶4(sccm);p型掺杂层非晶硅薄膜最优工艺为电流23.5 A,气压5.5 Pa,气体流量比Si H4∶H2∶B2H6=2∶50∶4(sccm),沉积时间为30min,温度为200℃。The doped amorphous silicon thin films can be made as emitter and back surface filed for solar cells,and its quality is one of the important factors that affect the conversion efficiency of solar cells. In the paper,doped amorphous silicon on the glass is used to optimize the process parameters with hot-wire-assisted chemical vapor deposition（ HWCVD）. The results show that： the optimal process of n-type doped amorphous silicon is： H2 is 50 sccm,pressure is 4. 0 Pa,and current is 20. 5A; and that the optimal process of p-type doped amorphous silicon is： Si H4∶ H2∶ B2H6= 2 ∶ 50 ∶ 4（ sccm）,pressure is 5. 5Pa,current is 23. 5 A,depositing time is 30 minutes,and the substrate temperature is 200℃.

关 键 词：掺杂非晶硅 电阻 气压 电流 流量比 

分 类 号：O484[理学—固体物理]