逆导型沟槽FS IGBT的设计与实现  

Design and Implementation of Reverse Conduction Trench FS IGBT

作　　者：邓小社[1] 郭绪阳 李泽宏[2] 张波[2] 张大成[1] 

机构地区：[1]北京大学软件与微电子学院,北京102600 [2]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《半导体技术》2017年第9期669-674,695,共7页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61404023);国家科技重大专项资助项目(2011ZX02504-001;2011ZX02504-003);电子科技大学电子薄膜与集成器件国家重点实验室开放基金资助项目(KFJJ201301)

摘　　要：逆导型沟槽场终止绝缘栅双极型晶体管(RC Trench FS IGBT)是一种新型的功率半导体器件,具有成本低、体积小、可靠性高等优点。设计并实现了一款1 200 V逆导型沟槽FS IGBT。重点研究了逆导型绝缘栅门极晶体管(RC IGBT)特有的回扫现象,以及如何从结构设计上消除回扫现象,其次,对RC IGBT在不同的载流子寿命下,进行了开关特性、反向恢复特性的仿真。研究结果发现随着载流子寿命的降低,其开关时间、反向恢复特性都有一定程度的改善。依据器件的最优化设计进行了流片。测试结果验证了不同设计对电流回扫现象的影响,以及不同少子寿命下导通特性和反向恢复特性的变化规律,器件的性能得到优化。Reverse conduction trench-field stop insulated-gate bipolar transistor（ RC trench FS IGBT） is a new power semiconductor device,which has advantages of low cost,small size and high reliability. A 1 200 V reverse conducting trench gate FS IGBT was designed,the snapback phenomenon of RC IGBT and how to improve snapback by different structure designs were studied. Secondly,the switching characteristics and reverse recovery characteristics of the RC IGBT were simulated with different carrier lifetimes. The results show that with the decrease of the carrier lifetime,the switching time and reverse recovery characteristics are improved. The device with design optimization was fabricated. The test result verifies the effect of different designs on snapback,and the rule of conducting characteristics and reverse recovery with different minor carrier lifetimes. The performances of the RC IGBT are optimized.

关 键 词：逆导型沟槽场终止绝缘栅双极型晶体管(RC TRENCH FS IGBT) 载流子寿命 反向恢复时间 回扫现象 开关特性 

分 类 号：TN322.8[电子电信—物理电子学]