Effects of incident energy and angle on carbon cluster ions implantation on silicon substrate:a molecular dynamics study  

作　　者：Ye Wei Shengbo Sang Bing Zhou Xiao Deng Jing Chai Jianlong Ji Yang Ge Yuanliang Huo Wendong Zhang 

机构地区：[1]Micro-Nano System Research Center,Key Laboratory of Advanced Transducers and Intelligent Control System,College of Information Engineering,Taiyuan University of Technology,Taiyuan 030024,China [2]Research Institute of Surface Engineering,Taiyuan University of Technology,Taiyuan 030024,China [3]College of Physics and Optoelectronics,Taiyuan University of Technology,Taiyuan 030024,China

出　　处：《Journal of Semiconductors》2017年第9期8-13,共6页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.51622507,61471255,61474079,61403273,51502193,51205273);the Natural Science Foundation of Shanxi(Nos.201601D021057,201603D421035);the Youth Foundation Project of Shanxi Province(Nos.2015021097);the Doctoral Fund of MOE of China(No.20131402110013);the National High Technology Research and Development Program of China(No.2015AA042601);the Specialized Project in Public Welfare from The Ministry of Water Resources of China(Nos.1261530110110)

摘　　要：Carbon cluster ion implantation is an important technique in fabricating functional devices at mi- cro/nanoscale. In this work, a numerical model is constructed for implantation and implemented with a cutting- edge molecular dynamics method. A series of simulations with varying incident energies and incident angles is performed for incidence on silicon substrate and correlated effects are compared in detail. Meanwhile, the behav- ior of the cluster during implantation is also examined under elevated temperatures. By mapping the nanoscopic morphology with variable parameters, numerical formalism is proposed to explain the different impacts on phrase transition and surface pattern formation. Particularly, implantation efficiency （IE） is computed and further used to evaluate the performance of the overall process. The calculated results could be properly adopted as the theoretical basis for designing nano-structures and adjusting devices＇ properties.Carbon cluster ion implantation is an important technique in fabricating functional devices at mi- cro/nanoscale. In this work, a numerical model is constructed for implantation and implemented with a cutting- edge molecular dynamics method. A series of simulations with varying incident energies and incident angles is performed for incidence on silicon substrate and correlated effects are compared in detail. Meanwhile, the behav- ior of the cluster during implantation is also examined under elevated temperatures. By mapping the nanoscopic morphology with variable parameters, numerical formalism is proposed to explain the different impacts on phrase transition and surface pattern formation. Particularly, implantation efficiency （IE） is computed and further used to evaluate the performance of the overall process. The calculated results could be properly adopted as the theoretical basis for designing nano-structures and adjusting devices＇ properties.

关 键 词：IMPLANTATION low incident energies IRRADIATION molecular dynamics 

分 类 号：TN305.3[电子电信—物理电子学] V211[航空宇航科学与技术—航空宇航推进理论与工程]