Few-mode vertical-cavity surface-emitting lasers for space-division multiplexing  

作　　者：Yaman Su Lijuan Yu Xia Guo Xing Zhang Jianguo Liu Ninghua Zhu 

机构地区：[1]State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]School of Electronic Engineering,Beijing University of Posts and Telecommunications,Beijing 100876,China [4]Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China

出　　处：《Journal of Semiconductors》2017年第9期42-47,共6页半导体学报（英文版）

基　　金：supported by the National Basic Research Program of China(No.2014CB3400102);the National Natural Science Foundation of China(No.61335004);the National High Technology Research and Development Program of China(No.2015AA017101);the National Key Technologies R&D Program of China(No.2016YFB0400603)

摘　　要：In order to choose the proper radius of oxide aperture for few-mode vertical-cavity surface-emitting lasers （VCSELs）, the influences of oxide aperture size on the multi-transverse-mode behaviors are investigated in detail. By establishing the effective refractive index model to simulate VCSELs with different radii of oxide apertures, the wavelength and corresponding order of different modes are obtained. VCSELs with three kinds of oxide apertures are manufactured. Then the multi-transverse-mode spectra and near-field are measured. It is found that when the radius is between 1.5 and 4.5μm, few-mode VCSELs can be implemented. The 2.5μm VCSEL manufactured in this paper only emits LP01 mode and LP21 mode. Since the space distance between the two modes is 2μm, it is expected to realize direct-modulation few-mode VCSELs by channel etching or ion implantation between the two modes.In order to choose the proper radius of oxide aperture for few-mode vertical-cavity surface-emitting lasers （VCSELs）, the influences of oxide aperture size on the multi-transverse-mode behaviors are investigated in detail. By establishing the effective refractive index model to simulate VCSELs with different radii of oxide apertures, the wavelength and corresponding order of different modes are obtained. VCSELs with three kinds of oxide apertures are manufactured. Then the multi-transverse-mode spectra and near-field are measured. It is found that when the radius is between 1.5 and 4.5μm, few-mode VCSELs can be implemented. The 2.5μm VCSEL manufactured in this paper only emits LP01 mode and LP21 mode. Since the space distance between the two modes is 2μm, it is expected to realize direct-modulation few-mode VCSELs by channel etching or ion implantation between the two modes.

关 键 词：few-mode VCSELs oxide aperture space-division multiplexing 

分 类 号：TN248[电子电信—物理电子学] TN929.11