Improved interfacial properties of GaAs MOS capacitor with NH3-plasma-treated ZnON as interfacial passivation layer  

作　　者：Jingkang Gong Jingping Xu Lu Liu Hanhan Lu Xiaoyu Liu Yaoyao Feng 

机构地区：[1]School of Optical and Electronic Information,Huazhong University of Science and Technology,Wuhan 430074,China

出　　处：《Journal of Semiconductors》2017年第9期56-61,共6页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.61176100,61274112,61404055)

摘　　要：The GaAs MOS capacitor was fabricated with HfTiON as high-k gate dielectric and NH3-plasma-treated ZnON as interfacial passivation layer （IPL）, and its interracial and electrical properties are investigated compared to its counterparts with ZnON IPL but no NH3-plasma treatment and without ZnON IPL and no plasma treatment. Experimental results show that low interface-state density near midgap （1.17×10^12 cm^-2eV^-1） and small gate leakage current density have been achieved for the GaAs MOS device with the stacked gate dielectric of Hf-TiON/ZnON plus NH3-plasma treatment. These improvements could be ascribed to the fact that the ZnON IPL can effectively block in-diffusion of oxygen atoms and out-diffusion of Ga and As atoms, and the NH3-plasma treatment can provide not only N atoms but also H atoms and NH radicals, which is greatly beneficial to removal of defective Ga/As oxides and As-As band, giving a high-quality ZnON/GaAs interface.The GaAs MOS capacitor was fabricated with HfTiON as high-k gate dielectric and NH3-plasma-treated ZnON as interfacial passivation layer （IPL）, and its interracial and electrical properties are investigated compared to its counterparts with ZnON IPL but no NH3-plasma treatment and without ZnON IPL and no plasma treatment. Experimental results show that low interface-state density near midgap （1.17×10^12 cm^-2eV^-1） and small gate leakage current density have been achieved for the GaAs MOS device with the stacked gate dielectric of Hf-TiON/ZnON plus NH3-plasma treatment. These improvements could be ascribed to the fact that the ZnON IPL can effectively block in-diffusion of oxygen atoms and out-diffusion of Ga and As atoms, and the NH3-plasma treatment can provide not only N atoms but also H atoms and NH radicals, which is greatly beneficial to removal of defective Ga/As oxides and As-As band, giving a high-quality ZnON/GaAs interface.

关 键 词：GaAs MOS ZnON interfacial passivation layer NH3-plasma treatment 

分 类 号：TN386[电子电信—物理电子学]