锑基硫化物铜锌锡硫硒薄膜的制备及研究  

Preparation of Insetting Antimony Sulfide Cu_2ZnSn(S,Se)_4 Thin Films

作　　者：郭洪玲[1] 王艳玲[1] 李智[1] 陈前赫[1] 

机构地区：[1]黑龙江工业学院环境工程系,黑龙江鸡西158100

出　　处：《黑龙江工业学院学报（综合版）》2017年第9期54-56,共3页Journal of Heilongjiang University of Technology(Comprehensive Edition)

摘　　要：吸光层是薄膜太阳能电池进行光电转换的重要因素之一,因其晶粒增长问题的困扰,使得很多研究者都在寻找有效的解决办法。对于铜锌硒硫锡薄膜太阳能电池,提出了溶液法兼容的方法在吸光层的预制膜中间旋涂Sb_2S_3、CuSbS_2和NaS_5S_8的薄膜。通过高温硒化,这些包含锑基硫化物的吸光层的晶体与空白的比较,明显提高了晶粒的大小,并且这三种硫化物对晶体的生长促进作用是有区别的,他们对晶体生长的促进的能力顺序为:Sb_2S_3>CuSbS_2>NaSb_5S_8。实验数据表明,仅需要很少量的锑基硫化物,就能够对晶态的成长起到明显的促进作用。Absorption layer is an important factors to determine the photovoltaic conversion of thin film solar cells, but its fur- ther development are facing the constraints of grain growth.. We presented a simple and effective ways to significantly enhance the grain growth in CZTSSe absorber layers by insetting Sb2S3, CuSbS2 and NaSbsSs into the thin films. Compared with blank control group, CZTSSe absorber layers with antimony sulfide present an significant grain growth by selenization process, and the ability of enhancing the crystal growth is Sb2S3 〉 CuSbS2 〉 NaSb5S8 under the same experimental conditions. The experimental data indicates the tiniest amounts of antimony sulfide can significantly promote the grain growth.

关 键 词：锑基硫化物 铜锌锡硫硒 太阳能电池 晶体生长 

分 类 号：TM911[电气工程—电力电子与电力传动]