超短源-衬距离衬底转动蒸发制备自支撑同位素靶的技术研究  

Study on Technology of Preparing Self-supporting Isotopic Target by Vacuum Evaporation of Ultra-short Source-substrate Distance Substrate Rotating

作　　者：孟波[1] 樊启文[1] 杜英辉[1] 张榕[1] 王华[1] 

机构地区：[1]中国原子能科学研究院核物理研究所,北京102413

出　　处：《原子能科学技术》2017年第9期1710-1715,共6页Atomic Energy Science and Technology

基　　金：国家自然科学基金资助项目(11205251;11475264)

摘　　要：研究了超短源-衬距离衬底转动蒸发制备自支撑同位素靶的技术。通过计算不同条件下衬底转动蒸发沉积的靶膜厚度分布、材料利用率及不均匀性,确定了最佳的源-衬距离和源-轴距离的匹配值。研究了蒸发舟材料、蒸发时间和蒸发距离对沉积靶膜的影响。实验表明,制备10mm的靶时,对于熔点分别为100~600、700~1 200、1 300~1 600和1 600~1 900℃的材料,合适的源-衬距离分别为13、15、20和25mm,对应的源-轴距离分别为12.5、13.0、14.5和16.0mm。The technology of preparing self-supporting isotopic target by the vacuum evaporation of ultra-short source-substrate distance substrate rotating was studied.The thickness distributions of targets were calculated with different geometric parameters.The material utilization and nonuniformity of targets were also calculated.The optimum source-shaft distances and source-substrate distances were determined.The influences of evaporation boat,evaporation distance and time on forming film were studied.The experiments indicate that in the preparation of a ф10 mm target,the appropriate sourcesubstrate distances are 13,15,20 and 25 mm for the materials with melting points of 100-600,700-1 200,1 300-1 600 and 1 600-1 900℃ ,respectively.And the corresponding source-shaft distances are 12.5,13.0,14.5 and 16.0 mm,respectively.

关 键 词：真空蒸发 衬底转动 同位素靶 不均匀性 材料利用率 

分 类 号：O484.1[理学—固体物理]