纳秒激光驱动的数千电子伏特X射线背光面源特性  

Characteristics of Multi-keV X-Ray Area Backlighting Sources Driven by Nanosecond Laser

作　　者：熊俊[1] 安红海[1] 贾果[1] 王伟[1] 王琛[1] 王瑞荣[1] 方智恒[1] 董佳钦[1] 雷安乐[1] 

机构地区：[1]中国工程物理研究院上海激光等离子体研究所,上海201800

出　　处：《中国激光》2017年第9期75-80,共6页Chinese Journal of Lasers

基　　金：国家自然科学基金(61475146)

摘　　要：数千电子伏特(Multi-keV)量级的X射线背光成像是高能密度等离子体物理实验中常用的一种诊断技术。在神光II激光装置上,研究了纳秒激光驱动钛4.7keV波段及氯2.7keV波段背光面源的性能。研究结果表明,氯背光能谱以类He线及类H线为主,其中2.7keV波段的类He-α线最强;在当前神光II激光加载能力下,氯背光面源相对强度超过钛背光面源一个量级,因此,可选用氯He-α线的X光探针进行背光诊断。Multi-keV X-rays are used as backlighting sources of the radiography to diagnose plasmas in high energy density physics （HEDP） experiments. We study the characteristics of Ti-4.7 keV and C1-2.7 keV X-rays driven by nanosecond laser at the SG-II laser facility. The results show that the X-rays from C1 plasma are primarily He-like and H-like line radiation, with 2.7 keV He-a line on the strongest line emission. In addition, the relative intensity of C1 X-rays is more than an order of magnitude compared to that of Ti X-rays under the current SG-II laser conditions. Therefore, the C1 X-rays can be used as the backlighting diagnosis.

关 键 词：X射线光学 背光面源 等离子体 K壳层能谱 氯 

分 类 号：O536[理学—等离子体物理] O434[理学—物理]