基于SPICE模型的SiC MOSFET静动态特性分析  

Analysis of SiC MOSFET Static and Dynamic Characteristics Based on SPICE Model

作　　者：许明明 王佳宁 冯之健 XU Ming-ming WANG Jia-ning FENG Zhi-jian(Hefei University of Technology, Hefei 230009, Chin)

机构地区：[1]合肥工业大学,安徽合肥230009

出　　处：《电力电子技术》2017年第9期28-30,共3页Power Electronics

基　　金：国家青年科学基金(51607053)~~

摘　　要：基于C2M系列SPICE模型,对碳化硅(SiC)金属氧化物半导体场效应晶体管(MOSFET)静动态特性进行分析。结果表明该模型在工作结温较低时,与数据手册提供的静态特性曲线较吻合,但工作结温较高时对SiC MOSFET静态特性模拟效果较差,于是在该模型基础上增加一个温控电压源,以补偿工作结温上升带来的影响。之后,通过双脉冲测试,对比分析该模型对SiC MOSFET动态特性的模拟效果。经过上述静、动特性的分析,发现该模型可较为准确地反映低结温时器件的真实工作特性,增加温控电压源后也适用于高结温工作状态。Based on the SPICE model of C2M series provided by the Cree website, the static and dynamic characteris- tics of silicon carbide（SiC） metal oxide semiconductor field effect transistor（MOSFET） are analyzed in detail.The re- suits show that the model is in good agreement with the static characteristic curve provided by datasheet when the junction temperature is low, but the simulation effect on the static characteristics of SiC MOSFET are poor when the junction temperature is high, thus, a temperature controlled voltage source is added to compensate for the impact of the junction temperature rise.By constructing a double pulse test platform and comparing the simulation effect of the model on the dynamic characteristics of SiC MOSFET, it is found that the model can accurately reflect the working characteristics of the device at low junction temperature, and it is also suitable for high junction temperature working state after increasing the temperature control voltage source.

关 键 词：晶体管 静动态特性 温控电压源 

分 类 号：TN32[电子电信—物理电子学]