基于新型碳化硅MOSFET三相逆变器研究  

The Three-phase Inverter Based on New SiC MOSFET

作　　者：韩鹏程[1] 周涛[1] 何晓琼[1] HAN Peng-cheng ZHOU Tao HE Xiao-qiong(Southwest Jiaotong University, Chengdu 610031, China)

机构地区：[1]西南交通大学电气工程学院,四川成都610031

出　　处：《电力电子技术》2017年第9期39-41,共3页Power Electronics

基　　金：国家自然科学基金(51477144)~~

摘　　要：采用新型C3M0120090D型碳化硅(SiC)金属氧化物半导体场效应晶体管(MOSFET)芯片,以三相H桥逆变器拓扑结构为基础,通过研究分析逆变器工作原理,从而研究了电压电流解耦控制。通过对C3M0120090D型SiC MOSFET芯片研究设计出新型SiC芯片驱动电路,通过搭建600 W三相H桥逆变实验平台,验证了SiC MOSFET芯片工作可行性与可靠性,且通过红外温度测量仪观测出带载工作时芯片温度与室温相近,验证了SiC MOSFET芯片工作的高效性。The new C3M0120090D silicon carbide （SiC） metal oxide semiconductor field effect transistor （MOSFET） chip is used.Based on the topology of three-phase H-bridge inverter, the working principle of the inverter is studied, and the decoupling control of voltage and current is studied.A new type of SiC chip driving circuit is designed by studying the SiC chip of C3M0120090D.The feasibility and reliability of SiC MOSFET chip are verified by construct- ing a 600 W three-phase H-bridge inverter experimental platform.The load of the SiC MOSFET chip is observed by infrared temperature measuring instrument.Work chip temperature and room temperature are similar to verify the work of SiC MOSFET chip efficiency.

关 键 词：逆变器 碳化硅 解耦控制 

分 类 号：TM464[电气工程—电器]