大面积非晶硅太阳电池窗口层的性能优化  

OPTIMIZATION OF WINDOW LAYER FOR LARGE AREA AMORPHOUS SILICON THIN-FILM SOLAR CELLS

作　　者：杜敏永 胡安红 郁操 蓝仕虎 张铭[1] 严辉[1] 张津岩 徐希翔 Du Minyong Hu Anhong Yu Cao Lan Shihu Zhang Ming Yan Hui Zhang Jinyan Xu Xixiang(College of Materials Science And Engineering, Beijing University of Technology, Beifing 100124, China Apollo Precision Group, R ＆ D Center, Chengdu 610200, China)

机构地区：[1]北京工业大学材料科学与工程学院,北京100124 [2]福建铂阳精工设备有限公司研发中心,成都610200

出　　处：《太阳能学报》2017年第9期2323-2328,共6页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金(11274028)

摘　　要：系统地研究产业化甚高频等离子体增强化学气相沉积法制备p型a-SiO_x∶H薄膜的工艺,并将p型a-SiO_x∶H作为a-Si∶H单结电池的窗口层,研究其对电池初始和稳定性能的影响。研究表明CO_2与SiH_4流量比(r(CO_2/SiH_4))、射频功率对a-SiO_x∶H薄膜的光电性能影响最大,r_((CO_2/SiH_4))=1.5和功率=444 W时制备的p型a-SiO_x∶H薄膜材料性能最优。相对于a-SiC_x∶H的p型窗口层,采用优化的p型a-SiO_x∶H薄膜作为窗口层的a-Si∶H单结电池具有相同的初始发电功率,但具有更好的稳定性能,降低了光致衰减。电池的光致衰减率相对降低11.2%,功率输出的稳定性相对提升2%。A series of p type a-SiOx ： H single films were prepared by VHF PECVD on large size substrate, a-Si ： H single junction solar cells with different p type a-SiOx ： H window layer were also prepared and these cell＇ s initial and stable I-V characteristics were compared. The results showed that the p type a-SiOx ：H film optical and electrical performance were changed with various r（CO2/SiH4）and RF power. Film with r（CO2/SiH4）=1.5 and RF power=444 W shows the best performance. Compared to a-Si： H single junction solar cell with p type a-SiCx： H, a-Si： H single junction solar cell with p type a-SiOx： H obtained the same initial power and better LID （Light Induced Degradation） performance. The LID ratio of a-Si： H single junction solar cell with p type a-SiOx ：H is 11.2% lower and stable power is 2% higher than the cell with p type a-SiCx ：H.

关 键 词：非晶硅氧 p型窗口层 非晶硅薄膜电池 光致衰减 

分 类 号：TM914.42[电气工程—电力电子与电力传动]