基于eGaN?FET的磁耦合谐振式无线电能传输系统的优化与可靠性分析  

Analysis of Reliability and Optimization of e GaN?FETs in Magnetic Resonant Coupling Wireless Power Transmission System

作　　者：于浩然 崔玉龙[1] 相春蕾 YU Haoran CUI Yulong XIANG Chunlei(School of Information Science and Technology, Beijing University of Chemical Technology, Beijing 100029, China)

机构地区：[1]北京化工大学信息科学与技术学院,北京100029

出　　处：《电器与能效管理技术》2017年第17期9-14,共6页Electrical & Energy Management Technology

摘　　要：在很高的谐振频率下,若使用传统的MOSFET作为无线电能传输(WPT)的发射端逆变电路的开关器件,会出现开关损耗大、发热量高以及很难实现软开关等造成系统效率低且不稳定的问题。为解决以上问题,提出了基于D类和E类放大器的拓扑结构,使用GaN?FET开关管,实现了高频下的无线电能传输。以串串补偿拓扑的WPT系统为基础,分析应用于WPT系统的E类和D类的功率放大器的结构和原理,在频率为1 MHz下实现了软开关,提高了系统的效率和可靠性。通过LTspice对试验进行仿真,得出试验结果。Recently,the magnetic resonant coupling wireless power transfer（WPT） system based on high frequency is largely applied in portable devices charging such as phones and computers. Under very high resonant frequency,if the transmitter inverter circuit of WPT system uses traditional power MOSFETs as switches,this setting may cause problems like more switching losses,higher heating losses and can not achieve soft-switching,making low efficiency and poor reliability of the WPT system. In order to solve those problems,voltage mode class-E amplifier and voltage mode class-D amplifier with eGaN FET were introduced. This paper analyzed the performance of the soft-switching in class-E amplifier and class-D amplifier under 1MHz frequency. Through LTspice simulation,it proves that small on-resistance and fast switching speed eGaN FETs used in class-E amplifier and class-D amplifier in inverter circuit can achieve better soft-switching,and reduce the loss and heat. The efficiency and reliability of the WPT system are increased.

关 键 词：无线电能传输(WPT) ZVS D类放大器 E类放大器 eGaN FET 可靠性 

分 类 号：TM724[电气工程—电力系统及自动化]