Damage threshold influenced by polishing imperfection distribution under 355-nm laser irradiation  

作　　者：余振 齐红基 张伟丽 王虎 王斌 王岳亮 黄昊鹏 

机构地区：[1]Key Laboratory of Materials for High Power Laser Shanghai Institute of Optics and Fine Mechanics [2]University of Chinese Academy of Sciences

出　　处：《Chinese Physics B》2017年第10期265-270,共6页中国物理B（英文版）

摘　　要：A systematic interpretation of laser-induced damage in the nanosecond regime is realized with a defect distribution buried inside the redeposited layer arising from a polishing process. Under the 355-nm laser irradiation, the size dependence of the defect embedded in the fused silica can be illustrated through the thermal conduction model. Considering CeO2 as the major initiator, the size distribution with the power law model is determined from the damage probability statistics. To verify the accuracy of the size distribution, the ion output scaling with depth for the inclusion element is obtained with the secondary ion mass spectrometer. For CeO2 particulates in size of the depth interval with ion output satisfied in the negative exponential form, the corresponding density is consistent with that of the identical size in the calculated size distribution. This coincidence implies an alternative method for the density analysis of photoactive imperfections within optical components at the semi-quantitative level based on the laser damage tests.A systematic interpretation of laser-induced damage in the nanosecond regime is realized with a defect distribution buried inside the redeposited layer arising from a polishing process. Under the 355-nm laser irradiation, the size dependence of the defect embedded in the fused silica can be illustrated through the thermal conduction model. Considering CeO2 as the major initiator, the size distribution with the power law model is determined from the damage probability statistics. To verify the accuracy of the size distribution, the ion output scaling with depth for the inclusion element is obtained with the secondary ion mass spectrometer. For CeO2 particulates in size of the depth interval with ion output satisfied in the negative exponential form, the corresponding density is consistent with that of the identical size in the calculated size distribution. This coincidence implies an alternative method for the density analysis of photoactive imperfections within optical components at the semi-quantitative level based on the laser damage tests.

关 键 词：laser-induced damage size distribution photoactive imperfection 

分 类 号：TN24[电子电信—物理电子学] TU452[建筑科学—岩土工程]