Optimize the thermoelectric performance of CdO ceramics by doping Zn  

作　　者：查欣雨 高琳洁 白洪昌 王江龙 王淑芳 

机构地区：[1]Hebei Key Laboratory of Optic-electronic Information and Materials, The College of Physics Science and Technology,Hebei University

出　　处：《Chinese Physics B》2017年第10期428-432,共5页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.51372064);the Natural Science Foundation of Hebei Province,China(Grant Nos.A2014201176 and E2017201209);the Outstanding Doctoral Cultivation Project of Hebei University(Grant No.YB201502);the Hebei Province Universities Science and Technology Program funded by the Hebei Provincial Education Department,China(Grant Nos.ZD2014018 and QN2017017)

摘　　要：The thermoelectric performance of CdO ceramics was enhanced by simultaneously optimizing the electrical and thermal transport properties via a small amount of Zn doping （≤3%）. The introduction of Zn can obviously increase the electrical conductivity of CdO due to the simultaneous increase of carrier concentration and mobility, and eventually results in an improvement in power factor. Zn doping is also effective in suppressing the thermal conductivity of CdO because of stronger phonon scatterings from point defects, Zn-riched second phase, and grain boundaries. A best ZT of about 0.45 has been achieved in the Cd1-xZnxO systems at about 1000 K, which is comparable to the highest values reported for other n-type oxide TE materials.The thermoelectric performance of CdO ceramics was enhanced by simultaneously optimizing the electrical and thermal transport properties via a small amount of Zn doping （≤3%）. The introduction of Zn can obviously increase the electrical conductivity of CdO due to the simultaneous increase of carrier concentration and mobility, and eventually results in an improvement in power factor. Zn doping is also effective in suppressing the thermal conductivity of CdO because of stronger phonon scatterings from point defects, Zn-riched second phase, and grain boundaries. A best ZT of about 0.45 has been achieved in the Cd1-xZnxO systems at about 1000 K, which is comparable to the highest values reported for other n-type oxide TE materials.

关 键 词：thermoelectric properties CDO Zn doping power factor thermal conductivity 

分 类 号：TQ174.12[化学工程—陶瓷工业]