Angle-resolved x-ray photoelectron spectroscopy study of GeO_x growth by plasma post-oxidation  

作　　者：赵治乾 张静 王晓磊 魏淑华 赵超 王文武 

机构地区：[1]Microelectronics Department North China University of Technology [2]Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences [3]School of Microelectronics University of Chinese Academy of Sciences

出　　处：《Chinese Physics B》2017年第10期453-458,共6页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.61574168 and 61504163)

摘　　要：The growth process of GeOx films formed by plasma post-oxidation （PPO） at room temperature （RT） is investigated using angle-resolved x-ray photoelectron spectroscopy （AR-XPS）. The experimental results show that the distributions of the Ge4＋ states, a mixture of the Ge^2＋ and Ge^3＋ states, and the Ge^1＋ states are localized from the GeOx surface to the GeOx/Ge interface. Moreover, the Ge^1＋ states are predominant when the two outermost layers of Ge atoms are oxidized. These findings are helpful for establishing in-depth knowledge of the growth mechanism of the GeOx layer and valuable for the optimization of Ge-based gate stacks for future complementary metal-oxide-semiconductor （MOS） field-effect transistor （CMOSFET） devices.The growth process of GeOx films formed by plasma post-oxidation （PPO） at room temperature （RT） is investigated using angle-resolved x-ray photoelectron spectroscopy （AR-XPS）. The experimental results show that the distributions of the Ge4＋ states, a mixture of the Ge^2＋ and Ge^3＋ states, and the Ge^1＋ states are localized from the GeOx surface to the GeOx/Ge interface. Moreover, the Ge^1＋ states are predominant when the two outermost layers of Ge atoms are oxidized. These findings are helpful for establishing in-depth knowledge of the growth mechanism of the GeOx layer and valuable for the optimization of Ge-based gate stacks for future complementary metal-oxide-semiconductor （MOS） field-effect transistor （CMOSFET） devices.

关 键 词：Ge plasma post-oxidation MOS XPS 

分 类 号：TN386[电子电信—物理电子学]