激光诱导三结GaAs太阳电池量子效率异常响应现象与机理  

Effect and Mechanism of Abnormal Response in Quantum Efficiency of Triple-Junction Solar Cell Induced by Laser

作　　者：窦鹏程 冯国斌[1,2] 张检民 张震[1,2] 师宇斌 李云鹏[1,2] 

机构地区：[1]西北核技术研究所室,西安710024 [2]激光与物质相互作用国家重点实验室,西安710024

出　　处：《现代应用物理》2017年第3期36-39,共4页Modern Applied Physics

基　　金：激光与物质相互作用国家重点实验室基金资助项目(SKLLIM1701Z;71111702)

摘　　要：通过对三结太阳电池进行激光辐照实验,研究了激光辐照引起三结砷化镓(GaAs)太阳电池量子效率谱的变化情况。在功率密度为11.1 W·cm^(-2),波长为808nm的激光辐照后,发现顶电池量子效率在吸收波段内降为0,而在吸收波段外出现了量子效率约为10%的异常响应。测量辐照后样品AM0光辐照下的I-V曲线发现,短路电流出现了较为明显的增加。根据量子效率测量原理分析认为,激光诱导的顶电池(限流层)限流失效是导致其吸收波段外量子效率异常增加的主要原因。Laser induced changes in the quantum efficiency spectra of triple-junction GaAs solar cell are investigated.It is found that the quantum efficiency（Q_E）of the top sub-cell decreases to zero in the absorbed band,and an abnormal response about 10% is observed out the absorbed band after the triple-junction GaAs solar cell is irradiated by laser with wavelength of 808 nm and power density of 11.1 W.cm^（-2）.After measuring the I-Vcurve of the sample under AM0 light radiation,an obvious increase in short-circuit current is observed.Based on the quantum efficiency measurement principle,it is indicated that the failure of current limiting ability in top sub-cell（current limiting layer）is the main reason for the abnormal increase of the quantum efficiency out the absorbed band.

关 键 词：激光辐照效应 三结GaAs太阳电池 量子效率谱 

分 类 号：TN249[电子电信—物理电子学]