Analysis of structural,optical and electrical properties of metal/p-ZnO-based Schottky diode  

作　　者：Lucky Agarwal Shweta Tripathi P.Chakrabarti 

机构地区：[1]Department of Electronics & Communication Engineering,Motilal Nehru National Institute of Technology [2]Department of Electronics Engineering Indian Institute of Technology(Banaras Hindu University)

出　　处：《Journal of Semiconductors》2017年第10期56-62,共7页半导体学报（英文版）

摘　　要：A systematic study of the behaviour of Pd/p-ZnO thin film Schottky diode has been reported.The p-type ZnO thin film with improved stability has been grown on n-type Si by doping ZnO with copper.Seebeck measurement confirmed the p-type nature of Cu-doped ZnO thin film.The X-ray diffraction spectra of the deposited film revealed polycrystalline nature with preferred growth orientation of （101） of ZnO film.The surface morphological study demonstrated the conformal deposition of a thin film over n-Si wafer.The estimated bandgap of Cu-doped ptype ZnO thin film from ellipsometric measurement turns out to be 3.14 eV at 300 K.The measured electrical parameters of the proposed Pd/p-ZnO Schottky diode have also been validated by the results of numerical simulation obtained by using ATLAS^（TM） device simulator.A systematic study of the behaviour of Pd/p-ZnO thin film Schottky diode has been reported.The p-type ZnO thin film with improved stability has been grown on n-type Si by doping ZnO with copper.Seebeck measurement confirmed the p-type nature of Cu-doped ZnO thin film.The X-ray diffraction spectra of the deposited film revealed polycrystalline nature with preferred growth orientation of （101） of ZnO film.The surface morphological study demonstrated the conformal deposition of a thin film over n-Si wafer.The estimated bandgap of Cu-doped ptype ZnO thin film from ellipsometric measurement turns out to be 3.14 eV at 300 K.The measured electrical parameters of the proposed Pd/p-ZnO Schottky diode have also been validated by the results of numerical simulation obtained by using ATLAS^（TM） device simulator.

关 键 词：p-type ZnO Cu-doped ZnO sol-gel method Schottky diode 

分 类 号：TN311.7[电子电信—物理电子学]